N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.35 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ SOT-223 CAN BE WAVE OR REFLOW SOLDERED ■ AVAILABLE IN TAPE AND REEL ON REQUEST ■ 150 °C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HARD DISK DRIVER

N-Channel 100-V (D-S) MOSFET

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N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-Channel MOSFET

Application Interfacing Switching © DC-DC Converters o Power management functions

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 100V RDSON (MAX.) 125mΩ ID 14A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free

N-Channel Enhancement MOSFET

Features • VDS=100V, ID=2A • RDS(ON)=220mΩ@VGS=10V(Typ.) • RDS(ON)=240mΩ@VGS=4.5V(Typ.) • High Power and current handing capability • Lead free product is acquired • Surface Mount Package Main Applications • Battery Protection • Load Switch • Power Management

Drain Current ID= 2A@ TC=25C

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