2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs

Description These are N-channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters. motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.05Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs

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2A 80V AND 100V 1.05 OHM N-CHANNEL POWER MOSFETS

2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs

The RFP2N08L and RFP2N10L are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished th

N-Channel 100-V (D-S) MOSFET

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MOSFET N-CH 100V 2A TO-220AB

N-Channel MOSFET

Application Interfacing Switching © DC-DC Converters o Power management functions

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 100V RDSON (MAX.) 125mΩ ID 14A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free

N-Channel Enhancement MOSFET

Features • VDS=100V, ID=2A • RDS(ON)=220mΩ@VGS=10V(Typ.) • RDS(ON)=240mΩ@VGS=4.5V(Typ.) • High Power and current handing capability • Lead free product is acquired • Surface Mount Package Main Applications • Battery Protection • Load Switch • Power Management

Drain Current ID= 2A@ TC=25C

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