100V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE(N-CHANNEL)

The UTC UTT2N10 is a complementary enhancement modeMOSFET H-BRIDGE, it uses UTC advanced technology to providecustomers low on resistance, low gate charge and low thresholdvoltage.The UTC UTT2N10 is universally applied in DC-AC Inverters andDC Motor control. • N-CHANNEL\n• RDS(on) < 1.0Ω @VGS = 4.5V\n• High switching speed;

COMPLEMENTARY ENHANCEMENT MODE MOSFET

文件：200.51 Kbytes Page：3 Pages

2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs

Description These are N-channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters. motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive

2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs

The RFP2N08L and RFP2N10L are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished th

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.35 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ SOT-223 CAN BE WAVE OR REFLOW SOLDERED ■ AVAILABLE IN TAPE AND REEL ON REQUEST ■ 150 °C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HARD DISK DRIVER

Drain Current ID= 2A@ TC=25C

文件：65.05 Kbytes Page：2 Pages