型号 功能描述 生产厂家&企业 LOGO 操作
STH12NA60FI

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS(

STMICROELECTRONICS

意法半导体

STH12NA60FI

fast power mos transistor

DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS(

STMICROELECTRONICS

意法半导体

STH12NA60FI

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=12A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS(

STMICROELECTRONICS

意法半导体

fast power mos transistor

DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS(

STMICROELECTRONICS

意法半导体

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS(

STMICROELECTRONICS

意法半导体

600V N-Channel MOSFET

文件:345.06 Kbytes Page:8 Pages

PANJIT

強茂

600V N-Channel MOSFET

文件:345.06 Kbytes Page:8 Pages

PANJIT

強茂

STH12NA60FI产品属性

  • 类型

    描述

  • 型号

    STH12NA60FI

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

更新时间:2025-8-12 17:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
23+
TO-3PF
5000
专做原装正品,假一罚百!
ST/意法半导体
24+
H2PAK-2
30000
原装正品公司现货,假一赔十!
ST
24+
TO-3P
2500
原装现货热卖
ST/意法半导体
21+
H2PAK-2
8080
只做原装,质量保证
24+
N/A
3560
ST
22+
TO-3P
25000
只做原装进口现货,专注配单
ST/意法半导体
24+
H2PAK-2
6000
全新原装深圳仓库现货有单必成
ST
23+
TO2633 D2Pak (2 Leads + Tab) V
8000
只做原装现货
ST
21+
TO263
1356
绝对有现货,不止网上数量!原装正品,假一赔十!
ST
25+
TO-3P
35400
独立分销商 公司只做原装 诚心经营 免费试样正品保证

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