位置：首页 > IC中文资料第10087页 > STH12NA60FI
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STH12NA60FI | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( | STMICROELECTRONICS 意法半导体 |   | |
STH12NA60FI | fast power mos transistor DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( | STMICROELECTRONICS 意法半导体 | | |
STH12NA60FI | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=12A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( | STMICROELECTRONICS 意法半导体 | | ||
fast power mos transistor DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( | STMICROELECTRONICS 意法半导体 | | ||
600V N-Channel MOSFET 文件：345.06 Kbytes Page：8 Pages | PANJIT 強茂 | | ||
600V N-Channel MOSFET 文件：345.06 Kbytes Page：8 Pages | PANJIT 強茂 | |
STH12NA60FI产品属性
- 类型
描述
- 型号
STH12NA60FI
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
23+ |
H2PAK-2 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
ST(意法) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
ST/意法半导体 |
24+ |
H2PAK-2 |
30000 |
原装正品公司现货,假一赔十! |
|||
ST |
23+ |
TO2633 D2Pak (2 Leads + Tab) V |
8000 |
只做原装现货 |
|||
ST/意法 |
23+ |
TO263 |
50000 |
全新原装正品现货,支持订货 |
|||
ST/意法半导体 |
2022+ |
H2PAK-2 |
6900 |
原厂原装,假一罚十 |
|||
ST |
24+ |
TO-3P |
2500 |
原装现货热卖 |
|||
24+ |
N/A |
3560 |
|||||
ST |
22+ |
TO-3P |
6000 |
十年配单,只做原装 |
|||
ST/意法半导体 |
25+ |
H2PAK-2 |
8880 |
原装认准芯泽盛世！ |
STH12NA60FI芯片相关品牌
STH12NA60FI规格书下载地址
STH12NA60FI参数引脚图相关
- tda2822
- tda2030功放电路图
- tda2030功放电路
- tda2030a
- tda2030
- tda2003功放电路图
- tda16846
- t7272
- t680
- t5007
- t5006
- t4242
- t40
- t2222
- t2010
- t100k
- sw-262
- stm32f103
- stm32
- stk
- STI5167
- STI5162
- STI5118
- STI5107
- STI5100
- STI4600
- STI3220
- STI1010
- STI1000
- STHV800
- STHV748
- STHV102
- STH8N80
- STH4N90
- ST-H300
- STH30
- STH-22
- STH-20
- STH-19
- STH17-0402
- STH165N10F4-2
- STH16012
- STH16010A
- STH16010
- STH16008
- STH16006A
- STH16006
- STH16004
- STH16002A
- STH16002
- STH15NB50FI
- STH140N8F7-2
- STH-14
- STH13NB60FI
- STH13NB60
- STH130N10F3-2
- STH13091
- STH13090
- STH13009
- STH12NA60
- STH12N60FI
- STH12N60
- STH110N10F7-6
- STH110N10F7-2
- STH1061
- STH100
- STH 24D75
- STH 24D50/R
- STH 24D50
- STH 24D35/R
- STH 24D35
- STH 24D25/R
- STH 24D25
- STH 24D12/R
- STH 24D12
- STH
- STGY50NC60WD
- STGY50NB60HD
- STGY40NC60VD
- STGWT60H65FB
- STGAP1S
- STG8820
- STG8810
- STG8211
- STG8210
- STG8209
- STG8207
- STG8206
- STG8205
- STG8203
- STG719
- STG6684
- STG6384
- STG5683
- STG5682
- STG5223
- STG5123
- STG4260
- STG4259
STH12NA60FI数据表相关新闻
STH150N10F7-2
进口代理
2023-11-9STHS34PF80TR红外传感器
STMicroElectronics 的非冷却、工厂校准红外传感器设计用于测量 FOV 内物体的红外辐射
2023-7-11STGWA40HP65FB2
进口代理
2023-4-20STGWA50M65DF2 全新原装正品 现货
STGWA50M65DF2 全新原装正品 现货
2022-8-9STHVDAC-303F6原装现货价格 优势
STHVDAC-303F6支持实单.可做含税
2021-8-30STGYA120M65DF2AG--芯立源
STGYA120M65DF2AG-汽车级650 V、120 A沟槽栅场截止M系列低损耗IGBT，Max247长引线封装
2020-7-9
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
