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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STH12NA60FI | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( | STMICROELECTRONICS 意法半导体 |   | |
STH12NA60FI | fast power mos transistor DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( | STMICROELECTRONICS 意法半导体 | | |
STH12NA60FI | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=12A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( | STMICROELECTRONICS 意法半导体 | | ||
fast power mos transistor DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( | STMICROELECTRONICS 意法半导体 | | ||
600V N-Channel MOSFET 文件：345.06 Kbytes Page：8 Pages | PANJIT 強茂 | | ||
600V N-Channel MOSFET 文件：345.06 Kbytes Page：8 Pages | PANJIT 強茂 | |
STH12NA60FI产品属性
- 类型
描述
- 型号
STH12NA60FI
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
23+ |
TO-3PF |
5000 |
专做原装正品,假一罚百! |
|||
ST/意法半导体 |
24+ |
H2PAK-2 |
30000 |
原装正品公司现货,假一赔十! |
|||
ST |
24+ |
TO-3P |
2500 |
原装现货热卖 |
|||
ST/意法半导体 |
21+ |
H2PAK-2 |
8080 |
只做原装,质量保证 |
|||
24+ |
N/A |
3560 |
|||||
ST |
22+ |
TO-3P |
25000 |
只做原装进口现货,专注配单 |
|||
ST/意法半导体 |
24+ |
H2PAK-2 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
ST |
23+ |
TO2633 D2Pak (2 Leads + Tab) V |
8000 |
只做原装现货 |
|||
ST |
21+ |
TO263 |
1356 |
绝对有现货,不止网上数量!原装正品,假一赔十! |
|||
ST |
25+ |
TO-3P |
35400 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
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STH12NA60FI规格书下载地址
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DdatasheetPDF页码索引
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