位置：首页 > IC中文资料第10087页 > STH12NA60
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STH12NA60 | N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS( | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  |   |
STH12NA60 | fastpowermostransistor DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS( | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | |
STH12NA60 | iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS( | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
fastpowermostransistor DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS( | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS( | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
600VN-ChannelMOSFET 文件：345.06 Kbytes Page：8 Pages | PANJITPan Jit International Inc. 強茂強茂股份有限公司 |  | | |
600VN-ChannelMOSFET 文件：345.06 Kbytes Page：8 Pages | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | |
STH12NA60产品属性
- 类型
描述
- 型号
STH12NA60
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STM原厂目录 |
24+ |
TO-220 |
28500 |
授权代理直销,原厂原装现货,假一罚十,特价销售 |
|||
ST(意法) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
ST |
24+ |
TO-3P |
2500 |
原装现货热卖 |
|||
ST |
21+ |
TO-3P |
23480 |
||||
24+ |
N/A |
3250 |
|||||
ST |
1816+ |
TO-263 |
6523 |
科恒伟业!只做原装正品,假一赔十! |
|||
ST |
22+ |
TO-3P |
6000 |
十年配单,只做原装 |
|||
ST |
16+ |
TO-3P |
10000 |
全新原装现货 |
|||
ST |
23+ |
TO-247 |
8795 |
||||
ST |
23+ |
TO-3PF |
5000 |
专做原装正品,假一罚百! |
STH12NA60芯片相关品牌
STH12NA60规格书下载地址
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DdatasheetPDF页码索引
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