| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
H12NA60 | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( | STMICROELECTRONICS 意法半导体 |   | |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( | STMICROELECTRONICS 意法半导体 | | ||
fast power mos transistor DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( | STMICROELECTRONICS 意法半导体 | | ||
600V N-Channel MOSFET 文件：345.06 Kbytes Page：8 Pages | PANJIT 強茂 | | ||
600V N-Channel MOSFET 文件：345.06 Kbytes Page：8 Pages | PANJIT 強茂 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
GTS |
23+ |
DIP10 |
20000 |
全新原装假一赔十 |
|||
GTS |
95+ |
DIP10 |
5000 |
全新原装进口自己库存优势 |
|||
NIEC |
24+ |
NA/ |
175 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
JST |
25+ |
N/A |
200000 |
专注连接器,连接一切可能 |
|||
ST |
25+ |
TO-3P |
18000 |
原厂直接发货进口原装 |
|||
ST |
25+ |
TO-3P |
16900 |
原装，请咨询 |
|||
JST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
JST |
18+ |
9800 |
代理进口原装/实单价格可谈 |
||||
JST |
连接器 |
123500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
CHINAXYJ |
23+ |
0805L |
9868 |
专做原装正品,假一罚百! |
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2019-1-28
DdatasheetPDF页码索引
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