| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
H12NA60 | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( | STMICROELECTRONICS 意法半导体 |   | |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( | STMICROELECTRONICS 意法半导体 | | ||
fast power mos transistor DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( | STMICROELECTRONICS 意法半导体 | | ||
600V N-Channel MOSFET 文件：345.06 Kbytes Page：8 Pages | PANJIT 強茂 | | ||
600V N-Channel MOSFET 文件：345.06 Kbytes Page：8 Pages | PANJIT 強茂 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
JST |
25+ |
2019+ |
82610 |
connector |
|||
JST/日压 |
22+ |
SMD |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
ST |
25+ |
TO-3P |
16900 |
原装，请咨询 |
|||
NIEC |
24+ |
NA/ |
175 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
GTS |
23+ |
DIP10 |
20000 |
全新原装假一赔十 |
|||
JST/日压 |
2508+ |
/ |
473077 |
一级代理，原装现货 |
|||
JST |
23+ |
smd |
10065 |
原装正品,有挂有货,假一赔十 |
|||
JST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
超微 |
23+ |
服务器 |
582 |
只做原装支持检测 |
|||
JST |
23+ |
NA |
70000 |
正规渠道,只有原装! |
H12NA60规格书下载地址
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H27QDG882BDA-BCF 闪存 供应商 现货 PDF资料 数据手册 原厂 古高标 13760196971
2019-1-28
DdatasheetPDF页码索引
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