| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
H12NA60 | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( | STMICROELECTRONICS 意法半导体 |   | |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( | STMICROELECTRONICS 意法半导体 | | ||
fast power mos transistor DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( | STMICROELECTRONICS 意法半导体 | | ||
600V N-Channel MOSFET 文件：345.06 Kbytes Page：8 Pages | PANJIT 強茂 | | ||
600V N-Channel MOSFET 文件：345.06 Kbytes Page：8 Pages | PANJIT 強茂 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NIEC |
23+ |
TO-247 |
50000 |
全新原装正品现货,支持订货 |
|||
JST/日压 |
22+ |
SMD |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
JST |
25+ |
N/A |
200000 |
专注连接器,连接一切可能 |
|||
JST |
2022.09.10 |
con |
6464 |
现货常备产品原装可到京北通宇商城查价格 |
|||
GTS |
17+ |
DIP10 |
9988 |
只做原装进口,自己库存 |
|||
JST |
23+ |
NA |
70000 |
正规渠道,只有原装! |
|||
GTS |
95+ |
DIP10 |
5000 |
全新原装进口自己库存优势 |
|||
JST |
连接器 |
123500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
NIEC |
23+ |
TO-247 |
25000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
JST |
23+ |
smd |
10065 |
原装正品,有挂有货,假一赔十 |
H12NA60芯片相关品牌
H12NA60规格书下载地址
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2019-1-28
DdatasheetPDF页码索引
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