| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
H12NA60 | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( | STMICROELECTRONICS 意法半导体 |   | |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( | STMICROELECTRONICS 意法半导体 | | ||
fast power mos transistor DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( | STMICROELECTRONICS 意法半导体 | | ||
600V N-Channel MOSFET 文件：345.06 Kbytes Page：8 Pages | PANJIT 強茂 | | ||
600V N-Channel MOSFET 文件：345.06 Kbytes Page：8 Pages | PANJIT 強茂 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
JST |
23+ |
smd |
10065 |
原装正品,有挂有货,假一赔十 |
|||
ST |
25+ |
TO-3PF |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
JST |
23+ |
NA |
70000 |
正规渠道,只有原装! |
|||
24+ |
N/A |
48000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
YAZAKI |
2022 |
连接器 |
10000 |
全新、原装 |
|||
NIEC/英达 |
24+ |
TO-247 |
60000 |
||||
JST/日压 |
24+ |
65200 |
|||||
ST |
26+ |
TO-3P |
60000 |
只有原装 可配单 |
|||
JST/日压 |
22+ |
SMD |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
JST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
H12NA60规格书下载地址
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2019-1-28
DdatasheetPDF页码索引
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