| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
H12NA60 | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( | STMICROELECTRONICS 意法半导体 |   | |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( | STMICROELECTRONICS 意法半导体 | | ||
fast power mos transistor DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( | STMICROELECTRONICS 意法半导体 | | ||
600V N-Channel MOSFET 文件：345.06 Kbytes Page：8 Pages | PANJIT 強茂 | | ||
600V N-Channel MOSFET 文件：345.06 Kbytes Page：8 Pages | PANJIT 強茂 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
26+ |
TO-3P |
60000 |
只有原装 可配单 |
|||
JST/日压 |
22+ |
SMD |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
JST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
ST/意法 |
22+ |
TO-3PF |
98460 |
||||
JST |
18+ |
9800 |
代理进口原装/实单价格可谈 |
||||
超微 |
23+ |
服务器 |
582 |
只做原装支持检测 |
|||
JST |
21+ |
标准封装 |
430 |
保证原装正品,需要请联系张小姐13544103396 |
|||
GTS |
95+ |
DIP10 |
5000 |
全新原装进口自己库存优势 |
|||
NIEC |
24+ |
NA/ |
175 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
GTS |
23+ |
DIP10 |
20000 |
全新原装假一赔十 |
H12NA60规格书下载地址
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2021-7-14H27QDG882BDA-BCF闪存供应商现货PDF资料数据手册原厂古高标13760196971
H27QDG882BDA-BCF 闪存 供应商 现货 PDF资料 数据手册 原厂 古高标 13760196971
2019-1-28
DdatasheetPDF页码索引
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