Trench gate field-stop IGBT, HB series 600 V, 60 A high speed

Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. F

封装/外壳：TO-3P-3，SC-65-3 包装：散装 描述：IGBT 600V 80A 375W TO3P-3L 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Trench gate field-stop IGBT, HB series 600 V, 60 A high speed

ULTRAFAST RECTIFIER

Features  Ultra-Fast switching  High current capability  Low reverse leakage current  High surge current capability  Terminals finish: 100% Pure Tin  This is a Pb − free device  All SMC parts are traceable to the wafer lot  Additional testing can be offered upon request

Trench gate field-stop IGBT, HB series 600 V, 60 A high speed

Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. F