Description

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Features

• Maximum junction temperature: TJ = 175 °C

• High speed switching series

• Minimized tail current

• VCE(sat) = 1.6 V (typ.) @ IC = 60 A

• Tight parameters distribution

• Safe paralleling

• Low thermal resistance

• Low VF soft recovery co-packaged diode

• Lead free package

Applications

• Induction heating

• Microwave oven

• Resonant converters