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STGW20NC60V价格
参考价格：￥9.7644
型号：STGW20NC60V 品牌：STMicroelectronics 备注：这里有STGW20NC60V多少钱，2025年最近7天走势，今日出价，今日竞价，STGW20NC60V批发/采购报价，STGW20NC60V行情走势销售排行榜，STGW20NC60V报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STGW20NC60V | 30 A - 600 V - very fast IGBT Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features • High frequency operation up to 50 kHz • Lower CRES / CIES ratio (no cross-conduction susceptibility) • High current capa | STMICROELECTRONICS 意法半导体 |   | |
STGW20NC60V | N-CHANNEL 30A - 600V - TO-220/TO-247 Very Fast PowerMESH IGBT 文件：293.18 Kbytes Page：11 Pages | STMICROELECTRONICS 意法半导体 | | |
STGW20NC60V | 30 A - 600 V - very fast IGBT 文件：407.05 Kbytes Page：16 Pages | STMICROELECTRONICS 意法半导体 | | |
STGW20NC60V | 封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 60A 200W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | STMICROELECTRONICS 意法半导体 | | |
N-CHANNEL 30A - 600V TO-247 Very Fast PowerMESH IGBT DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “V” identifies a family optimized for high frequency applications. General Features | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 60A 200W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | STMICROELECTRONICS 意法半导体 | | ||
30 A - 600 V - very fast IGBT Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features • High frequency operation up to 50 kHz • Lower CRES / CIES ratio (no cross-conduction susceptibility) • High current capa | STMICROELECTRONICS 意法半导体 | | ||
30 A - 600 V - very fast IGBT Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features • High frequency operation up to 50 kHz • Lower CRES / CIES ratio (no cross-conduction susceptibility) • High current capa | STMICROELECTRONICS 意法半导体 | | ||
30 A - 600 V - very fast IGBT Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features • High frequency operation up to 50 kHz • Lower CRES / CIES ratio (no cross-conduction susceptibility) • High current capa | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 30A - 600V TO-247 Very Fast PowerMESH IGBT DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “V” identifies a family optimized for high frequency applications. General Features | STMICROELECTRONICS 意法半导体 | | ||
30 A - 600 V - very fast IGBT 文件：407.05 Kbytes Page：16 Pages | STMICROELECTRONICS 意法半导体 | |
STGW20NC60V产品属性
- 类型
描述
- 型号
STGW20NC60V
- 功能描述
IGBT 晶体管 N-Ch 600 Volt 30 Amp
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
25+ |
TO-247 |
996880 |
只做原装,欢迎来电资询 |
|||
ST/意法半导体 |
24+ |
TO-247-3 |
16900 |
原装现货,实单价优 |
|||
ST |
25+ |
原厂原封 |
16900 |
原装，请咨询 |
|||
ST(意法半导体) |
24+ |
TO-247(AC) |
6000 |
只做全新原装正品现货,假一罚十 |
|||
ST |
2511 |
原厂原封 |
16900 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
ST |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
ST/意法 |
2410+ |
TO-247 |
15000 |
原装正品.假一赔百.正规渠道.原厂追溯. |
|||
ST/意法 |
24+ |
NA |
14280 |
强势渠道订货 7-10天 |
|||
ST/意法半导体 |
25+ |
原厂封装 |
9999 |
||||
ST |
ROHS |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
STGW20NC60V芯片相关品牌
STGW20NC60V规格书下载地址
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STGW20NC60V数据表相关新闻
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2023-12-26STGWA40HP65FB2
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全新原装现货 支持第三方机构验证
2022-6-7
DdatasheetPDF页码索引
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