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STGB20NC60V价格
参考价格：￥9.0956
型号：STGB20NC60V 品牌：STMicroelectronics 备注：这里有STGB20NC60V多少钱，2025年最近7天走势，今日出价，今日竞价，STGB20NC60V批发/采购报价，STGB20NC60V行情走势销售排行榜，STGB20NC60V报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STGB20NC60V | 30 A - 600 V - very fast IGBT Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features • High frequency operation up to 50 kHz • Lower CRES / CIES ratio (no cross-conduction susceptibility) • High current capa | STMICROELECTRONICS 意法半导体 |   | |
STGB20NC60V | 30 A, 600 V, very fast IGBT | STMICROELECTRONICS 意法半导体 | | |
STGB20NC60V | 30 A - 600 V - very fast IGBT 文件：407.05 Kbytes Page：16 Pages | STMICROELECTRONICS 意法半导体 | | |
30 A - 600 V - very fast IGBT Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features • High frequency operation up to 50 kHz • Lower CRES / CIES ratio (no cross-conduction susceptibility) • High current capa | STMICROELECTRONICS 意法半导体 | | ||
30 A - 600 V - very fast IGBT Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features • High frequency operation up to 50 kHz • Lower CRES / CIES ratio (no cross-conduction susceptibility) • High current capa | STMICROELECTRONICS 意法半导体 | | ||
30 A - 600 V - very fast IGBT Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features • High frequency operation up to 50 kHz • Lower CRES / CIES ratio (no cross-conduction susceptibility) • High current capa | STMICROELECTRONICS 意法半导体 | | ||
30 A - 600 V - very fast IGBT Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features • High frequency operation up to 50 kHz • Lower CRES / CIES ratio (no cross-conduction susceptibility) • High current capa | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 30A - 600V TO-247 Very Fast PowerMESH IGBT DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “V” identifies a family optimized for high frequency applications. General Features | STMICROELECTRONICS 意法半导体 | |
STGB20NC60V产品属性
- 类型
描述
- 型号
STGB20NC60V
- 功能描述
IGBT 晶体管 30 A 600V FAST IGBT
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
11430 |
原厂直销,现货供应,账期支持! |
|||
ST |
10+ |
TO-263 |
8180 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST |
25+ |
TO263 |
16900 |
原装，请咨询 |
|||
ST/意法 |
25+ |
TO263 |
880000 |
明嘉莱只做原装正品现货 |
|||
ST |
2511 |
TO263 |
16900 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
ST |
25+23+ |
TO-263 |
15676 |
绝对原装正品全新进口深圳现货 |
|||
ST/意法半导体 |
21+ |
D2PAK-3 |
8860 |
只做原装,质量保证 |
|||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
ST/意法 |
2022+ |
5000 |
只做原装,价格优惠,长期供货。 |
||||
ST |
23+ |
TO263 |
16900 |
正规渠道,只有原装! |
STGB20NC60V规格书下载地址
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STGB20NC60V数据表相关新闻
STGD5H60DF
进口代理
2023-4-24STF202-22T1G
STF202-22T1G
2023-4-20STGD10NC60KDT4
全新原装现货 支持第三方机构验证
2022-6-24STFW4N150
全新原装现货 支持第三方机构验证
2022-6-23STGD5H60DF
原装正品现货
2022-5-7STF40NF20 ST/意法 21+ TO-220F
https://hfx03.114ic.com/
2022-2-17
DdatasheetPDF页码索引
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