Trench gate field-stop IGBT, M series 650 V, 10 A low loss

文件：928.21 Kbytes Page：16 Pages

封装/外壳：TO-247-3 包装：管件 描述：TRENCH GATE FIELD-STOP IGBT M SE 分立半导体产品 晶体管 - UGBT、MOSFET - 单

沟槽栅场截止IGBT，M系列，650 V、10 A，低损耗

Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in D²PAK package

Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are ess

Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in D²PAK package

Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are ess

Trench gate field-stop IGBT, M series 650 V, 10 A low loss

文件：1.12648 Mbytes Page：20 Pages

Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in TO-220FP package

文件：989.1 Kbytes Page：17 Pages

Trench gate field-stop IGBT, M series 650 V, 10 A low loss

文件：945.33 Kbytes Page：18 Pages