| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
G10M65DF2 | Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in D²PAK package Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are ess | STMICROELECTRONICS 意法半导体 |   | |
Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in D²PAK package Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are ess | STMICROELECTRONICS 意法半导体 | | ||
Trench gate field-stop IGBT, M series 650 V, 10 A low loss 文件：1.12648 Mbytes Page：20 Pages | STMICROELECTRONICS 意法半导体 | | ||
Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in TO-220FP package 文件：989.1 Kbytes Page：17 Pages | STMICROELECTRONICS 意法半导体 | | ||
Trench gate field-stop IGBT, M series 650 V, 10 A low loss 文件：945.33 Kbytes Page：18 Pages | STMICROELECTRONICS 意法半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
GOFORD |
23+ |
SOP-8 |
3086 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
24+ |
N/A |
76000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
JINGDAO/晶导微 |
23+ |
150 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
INFINEON |
23+ |
TO-220 |
8000 |
只做原装现货 |
|||
H |
24+ |
TO3P |
500 |
||||
FSC |
24+ |
TO220 |
5000 |
只做原装公司现货 |
|||
GOFORD |
SOP-8 |
22+ |
6000 |
十年配单,只做原装 |
|||
NK/南科功率 |
2025+ |
SOP-8 |
986966 |
国产 |
|||
FAIRCHILD |
16+ |
TO-3P |
10000 |
全新原装现货 |
|||
FAIRCHILD/仙童 |
25+ |
TO-247 |
122 |
原装正品,假一罚十! |
G10M65DF2规格书下载地址
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G10M65DF2数据表相关新闻
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瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-4-16
DdatasheetPDF页码索引
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