6A, 600 V hyper fast IGBT with very fast diode

This series of hyper fast IGBT is based on PowerMESH technology and exhibits very low turn-off energy, thanks to a new lifetime control system. This results in an optimized trade-off between on-state voltage and switching losses, allowing very high operating frequencies.\n • Low CRES / CIESratio (no cross-conduction susceptibility)• Very soft ultra fast recovery antiparallel diode;

N-channel 600V - 6A - DPAK / D2PAK / TO-220 / TO-220FP Hyper fast IGBT

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600 V - 6 A hyper fast IGBT

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封装/外壳：TO-220-3 包装：卷带（TR） 描述：IGBT 600V 14A 56W TO220 分立半导体产品 晶体管 - UGBT、MOSFET - 单

6 A, 600 V hyper fast IGBT with Ultrafast diode

• Low CRES / CIES ratio (no cross-conduction susceptibility)\n• Very soft ultrafast recovery antiparallel diode• Very high frequency operation;

封装/外壳：TO-220-3 整包 包装：管件 描述：IGBT 600V 14A 56W TO-220 分立半导体产品 晶体管 - UGBT、MOSFET - 单

6 A, 600 V hyper fast IGBT

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N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/I2PAK PowerMESH?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 1.

N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/I2PAK PowerMESH?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 1.

N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/I2PAK PowerMESH?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 1.

N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/I2PAK PowerMESH?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 1.

N-CHANNEL 6A - 600V DPAK Very Fast PowerMESH IGBT

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