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型号 功能描述 生产厂家 企业 LOGO 操作
P6NC60

N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/I2PAK PowerMESH?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 1.

STMICROELECTRONICS

意法半导体

P6NC60

N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/I2PAK PowerMESH™II MOSFET

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/I2PAK PowerMESH?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 1.

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/I2PAK PowerMESH?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 1.

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/I2PAK PowerMESH?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 1.

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/I2PAK PowerMESH?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 1.

STMICROELECTRONICS

意法半导体

N-CHANNEL 6A - 600V DPAK Very Fast PowerMESH IGBT

文件:224.28 Kbytes Page:9 Pages

STMICROELECTRONICS

意法半导体

P6NC60产品属性

  • 类型

    描述

  • 型号

    P6NC60

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/I2PAK PowerMESH⑩II MOSFET

更新时间:2026-8-2 14:14:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
20+
TO-220F
38560
原装优势主营型号-可开原型号增税票
ST
0414+
TO-220F
340
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SST
原厂封装
9800
原装进口公司现货假一赔百
TOSHIBA/东芝
22+
TO-220F
6000
十年配单,只做原装
ST
23+
TO-220F
50000
全新原装正品现货,支持订货
ST/
24+
TO-220F
5000
全新原装正品,现货销售
ST
2511
TO-220
16900
电子元器件采购降本30%!原厂直采,砍掉中间差价
ST/意法
23+
TO-220
66563
原厂授权一级代理,专业海外优势订货,价格优势、品种
ST
23+
TO-220
16900
正规渠道,只有原装!
ST/意法
23+
TO-220F
50000
全新原装正品现货,支持订货

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