位置:首页 > IC中文资料第269页 > STP6NC60
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STP6NC60 | N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/I2PAK PowerMESH?줚I MOSFET DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 1. | STMICROELECTRONICS 意法半导体 | ||
STP6NC60 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 6.0A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 1.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | ||
STP6NC60 | MOSFET N-CH 600V 6A TO-220 | STMICROELECTRONICS 意法半导体 | ||
N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/I2PAK PowerMESH?줚I MOSFET DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 1. | STMICROELECTRONICS 意法半导体 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 6.0A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 1.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
N-channel 600V - 7A - D2PAK Very fast PowerMESH TM IGBT 文件:326.79 Kbytes Page:14 Pages | STMICROELECTRONICS 意法半导体 | |||
N-channel 600V - 7A - D2PAK / TO-220 / TO-220FP Very fast PowerMESH TM IGBT 文件:406.44 Kbytes Page:17 Pages | STMICROELECTRONICS 意法半导体 | |||
N-channel 600V - 7A - DPAK Very fast PowerMESH TM IGBT 文件:454.86 Kbytes Page:14 Pages | STMICROELECTRONICS 意法半导体 | |||
N-channel 600V - 7A - DPAK Very fast PowerMESH TM IGBT 文件:467.28 Kbytes Page:15 Pages | STMICROELECTRONICS 意法半导体 | |||
N-channel 600V - 7A - D2PAK / TO-220 / TO-220FP Very fast PowerMESH TM IGBT 文件:406.44 Kbytes Page:17 Pages | STMICROELECTRONICS 意法半导体 |
STP6NC60产品属性
- 类型
描述
- 型号
STP6NC60
- 功能描述
MOSFET N-CH 600V 6A TO-220
- RoHS
是
- 类别
分离式半导体产品 >> FET - 单
- 系列
PowerMESH™
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道,金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大)
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STMicroelect |
24+ |
TQFP |
37500 |
原装正品现货,价格有优势! |
|||
ST/意法 |
24+ |
NA/ |
8355 |
原厂直销,现货供应,账期支持! |
|||
STM |
2016+ |
TO220 |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ST |
20+ |
TO-220 |
38560 |
原装优势主营型号-可开原型号增税票 |
|||
ST |
24+ |
TO-220F |
12500 |
原装现货热卖 |
|||
ST/意法 |
2450+ |
TO220 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
ST |
24+ |
TO-220 |
6232 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
ST/意法 |
TO220 |
125000 |
一级代理原装正品,价格优势,长期供应! |
||||
ST/意法 |
22+ |
TO220 |
30000 |
十七年VIP会员,诚信经营,一手货源,原装正品可零售! |
|||
ST |
25+ |
TO220 |
30000 |
代理全新原装现货,价格优势 |
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STP6NC60规格书下载地址
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DdatasheetPDF页码索引
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