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STGP7NC60价格
参考价格：￥3.8654
型号：STGP7NC60H 品牌：STMicroelectronics 备注：这里有STGP7NC60多少钱，2025年最近7天走势，今日出价，今日竞价，STGP7NC60批发/采购报价，STGP7NC60行情走势销售排行榜，STGP7NC60报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N-channel PowerMESH™ 600 V, 14 A very fast IGBT Description This device is a very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. This device is well-suited for resonant or soft-switching applications. Features Low on-vo | STMICROELECTRONICS 意法半导体 |   | ||
N-channel PowerMESH™ 600 V, 14 A very fast IGBT Description This device is a very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. This device is well-suited for resonant or soft-switching applications. Features Low on-vo | STMICROELECTRONICS 意法半导体 | | ||
N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode Description These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ■ Low o | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 14A - 600V - TO-220/TO-220FP/DPAK Very Fast PowerMESH IGBT General Features ■ LOWER ON-VOLTAGE DROP (Vcesat) ■ OFF LOSSES INCLUDE TAIL CURRENT ■ LOSSES INCLUDE DIODE RECOVERY ENERGY ■ LOWER CRES/CIES RATIO ■ HIGH FREQUENCY OPERATION UP TO 70 KHz ■ VERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DIODE ■ NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 14A - 600V TO-220/DPAK Very Fast PowerMESH IGBT 文件：367.89 Kbytes Page：12 Pages | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：TO-220-3 包装：卷带（TR） 描述：IGBT 600V 25A 80W TO220 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 25A 80W TO220 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | STMICROELECTRONICS 意法半导体 | | ||
N沟道14 A、600 V超快IGBT，带超高速二极管 | STMICROELECTRONICS 意法半导体 | | ||
N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode Description These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ■ Low o | STMICROELECTRONICS 意法半导体 | | ||
N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode Description These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ■ Low o | STMICROELECTRONICS 意法半导体 | | ||
N-channel PowerMESH™ 600 V, 14 A very fast IGBT Description This device is a very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. This device is well-suited for resonant or soft-switching applications. Features Low on-vo | STMICROELECTRONICS 意法半导体 | | ||
N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode Description These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ■ Low o | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 14A - 600V - TO-220/TO-220FP/DPAK Very Fast PowerMESH IGBT General Features ■ LOWER ON-VOLTAGE DROP (Vcesat) ■ OFF LOSSES INCLUDE TAIL CURRENT ■ LOSSES INCLUDE DIODE RECOVERY ENERGY ■ LOWER CRES/CIES RATIO ■ HIGH FREQUENCY OPERATION UP TO 70 KHz ■ VERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DIODE ■ NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER | STMICROELECTRONICS 意法半导体 | |
STGP7NC60产品属性
- 类型
描述
- 型号
STGP7NC60
- 功能描述
IGBT 晶体管 V-FAST POWERMESH
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST专家 |
20+ |
TO-220 |
69052 |
原装优势主营型号-可开原型号增税票 |
|||
ST/意法 |
25+ |
原厂原封可拆 |
54685 |
百分百原装现货有单来谈 |
|||
ST/意法 |
21+ |
TO-220 |
1770 |
只做原装,一定有货,不止网上数量,量多可订货! |
|||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ST |
26+ |
TO-220 |
60000 |
只有原装 可配单 |
|||
STMicroelectronics |
25+ |
TO-220-3 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
ST/意法 |
2450+ |
TO-220 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
ST(意法) |
24+ |
TO-220(TO-220-3) |
8241 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
ST |
2526+ |
原厂封装 |
50000 |
15年芯片行业经验/只供原装正品:0755-83268904邹小姐 |
STGP7NC60规格书下载地址
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全新原装现货 支持第三方机构验证
2022-6-7
DdatasheetPDF页码索引
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