Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed

Features  AEC-Q101 qualified  Maximum junction temperature: TJ = 175 °C  Logic level gate drive  High speed switching series  Minimized tail current  VCE(sat) = 1.7 V (typ.) @ IC = 30 A  Low VF soft recovery co-packaged diode  Tight parameters distribution  Safer paralleling  L

汽车级600 V、30 A高速沟槽栅场截止HB系列IGBT

60 V field-effect rectifier diode

Features  ST advanced rectifier process  Stable leakage current over reverse voltage  Reduced leakage current  Low forward voltage drop  High frequency operation Description The device is based on a proprietary technology that achieves the best in class VF/IR trade-off for a given si

60 V field-effect rectifier diode

Features  ST advanced rectifier process  Stable leakage current over reverse voltage  Reduced leakage current  Low forward voltage drop  High frequency operation Description The device is based on a proprietary technology that achieves the best in class VF/IR trade-off for a given si

60 V field-effect rectifier diode

Features  ST advanced rectifier process  Stable leakage current over reverse voltage  Reduced leakage current  Low forward voltage drop  High frequency operation Description The device is based on a proprietary technology that achieves the best in class VF/IR trade-off for a given si

30 Ampere Insulated Dual Common Cathode Schottky Barrier Rectifier Diode

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HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

文件：153.68 Kbytes Page：7 Pages