Features

 AEC-Q101 qualified

 Maximum junction temperature: TJ = 175 °C

 Logic level gate drive

 High speed switching series

 Minimized tail current

 VCE(sat) = 1.7 V (typ.) @ IC = 30 A

 Low VF soft recovery co-packaged diode

 Tight parameters distribution

 Safer paralleling

 Low thermal resistance

Description

This device is an IGBT developed using an

advanced proprietary trench gate field-stop

structure. The device is part of the new HB series

of IGBTs, which represents an optimum

compromise between conduction and switching

loss to maximize the efficiency of any frequency

converter. Furthermore, the slightly positive

VCE(sat) temperature coefficient and very tight

parameter distribution result in safer paralleling

operation.

Applications

 Ignition