STGB30H60DF价格

参考价格:¥15.8875

型号:STGB30H60DF 品牌:STM 备注:这里有STGB30H60DF多少钱,2025年最近7天走势,今日出价,今日竞价,STGB30H60DF批发/采购报价,STGB30H60DF行情走势销售排行榜,STGB30H60DF报价。
型号 功能描述 生产厂家 企业 LOGO 操作
STGB30H60DF

600 V, 30 A high speed trench gate field-stop IGBT

Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(s

STMICROELECTRONICS

意法半导体

STGB30H60DF

600 V, 30 A high speed trench gate field-stop IGBT

STMICROELECTRONICS

意法半导体

Trench gate Field-Stop IGBT

DESCRIPTION ·Low Saturation Voltage:VCE(sat)=2.0V@IC=30A ·High Current Capability ·High Input Impedance ·Fast Switching APPLICATIONS ·Synchronous Rectification in SMPS ·Automotive Chargers ·UPS,PFC ·High Voltage Auxiliaries

ISC

无锡固电

Trench gate field-stop IGBT, HB series 600 V, 30 A high speed

Description These devices are IGBTs developed using an advanced proprietary trench gate and field stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency conve

STMICROELECTRONICS

意法半导体

600 V、30 A高速沟槽栅场截止HB系列IGBT

STMICROELECTRONICS

意法半导体

60 V field-effect rectifier diode

Features  ST advanced rectifier process  Stable leakage current over reverse voltage  Reduced leakage current  Low forward voltage drop  High frequency operation Description The device is based on a proprietary technology that achieves the best in class VF/IR trade-off for a given si

STMICROELECTRONICS

意法半导体

60 V field-effect rectifier diode

Features  ST advanced rectifier process  Stable leakage current over reverse voltage  Reduced leakage current  Low forward voltage drop  High frequency operation Description The device is based on a proprietary technology that achieves the best in class VF/IR trade-off for a given si

STMICROELECTRONICS

意法半导体

60 V field-effect rectifier diode

Features  ST advanced rectifier process  Stable leakage current over reverse voltage  Reduced leakage current  Low forward voltage drop  High frequency operation Description The device is based on a proprietary technology that achieves the best in class VF/IR trade-off for a given si

STMICROELECTRONICS

意法半导体

30 Ampere Insulated Dual Common Cathode Schottky Barrier Rectifier Diode

文件:385.31 Kbytes Page:2 Pages

THINKISEMI

思祁半导体

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

文件:153.68 Kbytes Page:7 Pages

GAMMA

更新时间:2025-12-16 15:15:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法半导体
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
ST/意法半导体
25+
原厂封装
10280
ST(意法)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
ST
23+
D2PAK
8000
只做原装现货
ST
22+
D2PAK
9000
原厂渠道,现货配单
ST
2526+
原厂封装
50000
15年芯片行业经验/只供原装正品:0755-83268823邹小姐
ST/意法
24+
NA
14280
强势渠道订货 7-10天
ST
25+
TO-263
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
ST
1932+
TO-263
622
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SST
原厂封装
9800
原装进口公司现货假一赔百

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