Description

This device is an IGBT developed using an

advanced proprietary trench gate and field stop

structure. This IGBT series offers the optimum

compromise between conduction and switching

losses, maximizing the efficiency of very high

frequency converters. Furthermore, a positive

VCE(sat) temperature coefficient and very tight

parameter distribution result in easier paralleling

operation.

Features

• High speed switching

• Tight parameters distribution

• Safe paralleling

• Low thermal resistance

• Short circuit rated

• Ultrafast soft recovery antiparallel diode

Applications

• Inverter

• UPS

• PFC