包装：散装 描述：IGBT

包装：散装 描述：IGBT

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 19A@ TC=25℃ ·Drain Source Voltage- : VDSS=400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.24Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

isc N-Channel MOSFET Transistor

文件：306.06 Kbytes Page：2 Pages

N-Channel MOSFET 400V, 19A, 0.24廓

文件：264.41 Kbytes Page：9 Pages

N-Channel MOSFET 400V, 19A, 0.24廓

文件：264.41 Kbytes Page：9 Pages