isc N-Channel MOSFET Transistor

·FEATURES ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1500V(Min) ·Static Drain-Source On-Resistance : RDS(on)

N沟道1500 V、5 Ohm、4 A PowerMESH(TM) 功率MOSFET，TO-3PF封装

Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.\n\n The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) • 100% avalanche tested \n• High speed switching \n• Intrinsic capacitances and Qg minimized \n• Creepage distance path is 5.4 mm (typ.) for TO-3PF \n• Fully isolated TO-3PF plastic packages;

N-channel 1500 V - 5 廓 - 4 A - PowerMESH??Power MOSFET TO-220 - TO-220FH - TO-247 - TO-3PF

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丝印代码：4N150；N-channel 1500 V, 5 廓, 4 A, PowerMESH??Power MOSFET in TO-220, TO-247, TO-3PF

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N-channel 1500 V, 5 廓, 4 A, PowerMESH??Power MOSFET in TO-220, TO-247, TO-3PF

文件：762.25 Kbytes Page：15 Pages

N-CHANNEL 1500V - 5-ohm - 4A TO-220FH Very High Voltage PowerMESH-TM MOSFET

Description Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives th

N-CHANNEL 1500V - 5 - 4A TO-220/TO-247 Very High Voltage PowerMESH MOSFET

Description Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives th

N-CHANNEL 1500V - 5 - 4A TO-220/TO-247 Very High Voltage PowerMESH MOSFET

Description Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives th

N-channel 1500V - 5廓 - 4A - TO-220FH Very high voltage PowerMESH??Power MOSFET

文件：249.12 Kbytes Page：13 Pages

N-channel 1500V - 5廓 - 4A - TO-220/TO-247 Very high PowerMESH??Power MOSFET

文件：365.47 Kbytes Page：14 Pages