N-channel 600 V, 0.078 typ., 34 A MDmeshTM M2 Power MOSFET in a TO-220FP wide creepage package

Features  Extremely low gate charge  Excellent output capacitance (COSS) profile  100 avalanche tested  Zener-protected  Wide creepage distance of 4.25 mm between the pins Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip

N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in TO-220FP wide crepage package

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=34A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.088Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel 600 V, 0.078 Ω typ., 34 A MDmesh M2 Power MOSFETs in TO-220FP, I2PAKFP and TO-3PF packages

Features • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100 avalanche tested • Zener-protected Applications • Switching applications • LLC converters, resonant converters Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 tec

N-channel 600 V, 0.078 typ., 34 A MDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages

文件：1.19475 Mbytes Page：21 Pages

N-channel 600 V, 0.078 typ., 34 A MDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages

文件：1.17801 Mbytes Page：22 Pages

N-channel 600 V, 0.078 typ., 34 A MDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages

文件：1.17801 Mbytes Page：22 Pages