Features

 Extremely low gate charge

 Excellent output capacitance (COSS) profile

 100 avalanche tested

 Zener-protected

 Wide creepage distance of 4.25 mm between the pins

Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

The TO-220FP wide creepage package provides increased surface insulation for Power MOSFETs to prevent failure due to arcing, which can occur in polluted environments.

Applications

 Switching applications

 LLC converters, resonant converters