N-channel 600 V, 0.168 ??typ., 18 A MDmesh??M2 Power MOSFET in a TO-220FP wide creepage package

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N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFET in TO-220FP and I2PAKFP packages

Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They

N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFET in TO-220FP and I2PAKFP packages

Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They

N-Channel 650-V (D-S) Super Junction MOSFET

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N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFET in D2PAK

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