N-channel 600 V, 0.78 typ., 6 A MDmeshTM DM2 Power MOSFET in a TO-220FP package

Features  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100 avalanche tested  Extremely high dv/dt ruggedness  Zener-protected Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode seri

N-channel 600 V, 0.78 Ohm typ., 6 A MDmesh DM2 Power MOSFET in a TO-220FP package

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diodeseries. It offers very low recovery charge (Qrr) and time (trr)combined with low RDS(on), rendering it suitable for the most demanding highefficiency converters and ideal for bridge topologies and ZVS phase-shiftc • Fast-recovery body diode\n• Extremely low gate charge and input capacitance\n• Low on-resistance• 100% avalanche tested\n• Extremely high dv/dt ruggedness\n• Zener-protected;

N沟道600 V、0.86 Ohm典型值、5 A MDmesh M2功率MOSFET，TO-220FP封装

This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore sui • Extremely low gate charge \n• Lower RDS(on)x area vs previous generation \n• Low gate input resistance \n• 100% avalanche tested \n• Zener-protected;

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) -RDS(on) = 0.95Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Low gate input resistance

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Insulated Gate Bipolar Transistor

This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on)

Insulated Gate Bipolar Transistor

This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on)

Insulated Gate Bipolar Transistor withr Anti-Parallel Diode

This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP7N60E is supplied

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications. The PHX7N60E is supplied