N-channel 600 V, 0.78 typ., 6 A MDmeshTM DM2 Power MOSFET in a TO-220FP package

Features  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100 avalanche tested  Extremely high dv/dt ruggedness  Zener-protected Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode seri

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) -RDS(on) = 0.95Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel 600 V, 0.78 Ohm typ., 6 A MDmesh DM2 Power MOSFET in a TO-220FP package

N沟道600 V、0.86 Ohm典型值、5 A MDmesh M2功率MOSFET，TO-220FP封装

Low gate input resistance

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7.4 Amps, 600 Volts N-CHANNEL MOSFET

■ DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in swi

7 Amps竊?00Volts N-Channel MOSFET

■ Description The ET7N60 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. ■ Features ● RDS(ON) = 1.20Ω@VGS = 10 V ● Low gate cha

isc N-Channel Mosfet Transistor

• DESCRITION • Designed for high efficiency switch mode power supply. • FEATURES • Drain Current –ID= 7A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) • Avalanche Energy Specified • Fast Switching • Simple Drive Requirem

7A 600V N-channel Enhancement Mode Power MOSFET

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