N-channel 600 V, 0.95 typ., 5 A MDmesh™ DM2 Power MOSFET in a TO-220FP package

Features • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4.5A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Extremely low gate charge

Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency

N-channel 600 V, 0.95 Ohm typ., 5 A MDmesh DM2 Power MOSFET in a TO-220FP package

N沟道600 V、1.06 Ohm典型值、4.5 A MDmesh M2功率MOSFET，TO-220FP封装

N-Channel 650V (D-S) Power MOSFET

文件：1.13144 Mbytes Page：11 Pages

6.2 Amps, 600/650 Volts N-CHANNEL MOSFET

 DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

Avalanche Energy Specified

DESCRITION · Designed for high efficiency switch mode power supply. FEATURES · Drain Current –ID= 6A@ TC=25℃ · Drain Source Voltage-: VDSS= 600V(Min) · Static Drain-Source On-Resistance : RDS(on) = 1.2Ω (Max) · Avalanche Energy Specified · Fast Switching · Simple Drive Requirements

N-Channel 600V (D-S) Power MOSFET

文件：1.0803 Mbytes Page：9 Pages

N-CHANNEL POWER MOSFET

文件：460.3 Kbytes Page：6 Pages

N-Channel Power MOSFET

文件：486.21 Kbytes Page：10 Pages