位置：首页 > IC中文资料第5633页 > 6N60
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
6N60 | 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications | UTC 友顺 |   | |
6N60 | Avalanche Energy Specified DESCRITION · Designed for high efficiency switch mode power supply. FEATURES · Drain Current –ID= 6A@ TC=25℃ · Drain Source Voltage-: VDSS= 600V(Min) · Static Drain-Source On-Resistance : RDS(on) = 1.2Ω (Max) · Avalanche Energy Specified · Fast Switching · Simple Drive Requirements | ISC 无锡固电 | | |
6N60 | 6.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applicati | SYC | | |
6N60 | 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET 文件：249.26 Kbytes Page：6 Pages | UTC 友顺 | | |
6N60 | 6A mps,600 Volts N-CHANNEL MOSFET 文件：193.16 Kbytes Page：2 Pages | CHONGQING 重庆平伟实业 | | |
6N60 | 6.2A, 600V N-CHANNEL POWER MOSFET 文件：254.42 Kbytes Page：6 Pages | UTC 友顺 | | |
6N60 | N-CHANNEL POWER MOSFET 文件：2.10805 Mbytes Page：7 Pages | SUNMATE 森美特 | | |
6N60 | N-CHANNEL MOSFET 文件：219.8 Kbytes Page：6 Pages | ARTSCHIP | | |
6N60 | 600V N-Channel Power MOSFET 文件：1.88521 Mbytes Page：8 Pages | DYELECDIYI Electronic Technology Co., Ltd. 迪一电子山东迪一电子科技有限公司 | | |
6N60 | N-CHANNEL POWER MOSFET 文件：460.3 Kbytes Page：6 Pages | ZSELEC 淄博圣诺电子 | | |
6N60 | N-Channel Power MOSFET 文件：486.21 Kbytes Page：10 Pages | NELLSEMI 尼尔半导体 | | |
6N60 | N-Channel 600V (D-S) Power MOSFET 文件：1.0803 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | |
6.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications | UTC 友顺 | | ||
6.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications | UTC 友顺 | | ||
6.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications | UTC 友顺 | | ||
6.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications | UTC 友顺 | | ||
600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchildís proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching p | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
N-CHANNEL SILICON POWER MOSFET Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applica | Fuji 富士电机 | | ||
6.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications | UTC 友顺 | | ||
6.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications | UTC 友顺 | | ||
6.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications | UTC 友顺 | | ||
6.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications | UTC 友顺 | | ||
N-channel 600 V, 1.00 typ., 5.5 A MDmesh M2 Power MOSFET in an SOT223-2 package Features • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the de | STMICROELECTRONICS 意法半导体 | | ||
6.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in swi | UTC 友顺 | | ||
6.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in swi | UTC 友顺 | | ||
6.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in swi | UTC 友顺 | | ||
6.2 Amps, 600/650 Volts N-CHANNEL MOSFET 文件：249.26 Kbytes Page：6 Pages | UTC 友顺 | | ||
6.2A, 600V N-CHANNEL POWER MOSFET 文件：254.42 Kbytes Page：6 Pages | UTC 友顺 | | ||
6A 600V N-channel enhanced field effect transistor 文件：1.12341 Mbytes Page：7 Pages | YFWDIODE 佑风微电子 | | ||
N-Channel Power MOSFET 文件：486.21 Kbytes Page：10 Pages | NELLSEMI 尼尔半导体 | | ||
N-Channel Power MOSFET 文件：486.21 Kbytes Page：10 Pages | NELLSEMI 尼尔半导体 | | ||
N-CHANNEL MOSFET 文件：219.8 Kbytes Page：6 Pages | ARTSCHIP | | ||
6A mps,600 Volts N-CHANNEL MOSFET 文件：193.16 Kbytes Page：2 Pages | CHONGQING 重庆平伟实业 | | ||
N-CHANNEL MOSFET 文件：219.8 Kbytes Page：6 Pages | ARTSCHIP | | ||
N-CHANNEL POWER MOSFET 文件：225.14 Kbytes Page：7 Pages | UTC 友顺 | | ||
6A mps,600 Volts N-CHANNEL MOSFET 文件：193.16 Kbytes Page：2 Pages | CHONGQING 重庆平伟实业 | | ||
N-CHANNEL POWER MOSFET 文件：2.10805 Mbytes Page：7 Pages | SUNMATE 森美特 | | ||
N-Channel Power MOSFET 文件：486.21 Kbytes Page：10 Pages | NELLSEMI 尼尔半导体 | | ||
N-CHANNEL POWER MOSFET 文件：2.10805 Mbytes Page：7 Pages | SUNMATE 森美特 | | ||
N-Channel Power MOSFET 文件：486.21 Kbytes Page：10 Pages | NELLSEMI 尼尔半导体 | | ||
N-CHANNEL POWER MOSFET 文件：264.93 Kbytes Page：7 Pages | UTC 友顺 | | ||
6.2A, 600V N-CHANNEL POWER MOSFET 文件：254.42 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：264.93 Kbytes Page：7 Pages | UTC 友顺 | | ||
6.2A, 600V N-CHANNEL POWER MOSFET 文件：254.42 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：225.14 Kbytes Page：7 Pages | UTC 友顺 | | ||
6.2A, 600V N-CHANNEL POWER MOSFET 文件：254.42 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：264.93 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：264.93 Kbytes Page：7 Pages | UTC 友顺 | | ||
6.2A, 600V N-CHANNEL POWER MOSFET 文件：254.42 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：225.14 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：264.93 Kbytes Page：7 Pages | UTC 友顺 | | ||
6.2A, 600V N-CHANNEL POWER MOSFET 文件：254.42 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：225.14 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：225.14 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：225.14 Kbytes Page：7 Pages | UTC 友顺 | | ||
6.2A, 600V N-CHANNEL POWER MOSFET 文件：254.42 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：264.93 Kbytes Page：7 Pages | UTC 友顺 | | ||
6.2A, 600V N-CHANNEL POWER MOSFET 文件：254.42 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：264.93 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：264.93 Kbytes Page：7 Pages | UTC 友顺 | |
6N60产品属性
- 类型
描述
- 型号
6N60
- 制造商
UTC-IC
- 制造商全称
UTC-IC
- 功能描述
6.2 Amps, 600/650 Volts N-CHANNEL MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NIKOS |
24+ |
NA/ |
15000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
REASUNOS |
1948+ |
TO-252 |
18562 |
只做原装正品现货!或订货假一赔十! |
|||
F |
25+ |
TOP220 |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
CDT |
18+ |
TO-220F |
85600 |
保证进口原装可开17%增值税发票 |
|||
UTC/友顺 |
22+ |
TO-220 |
25000 |
只有原装原装,支持BOM配单 |
|||
INFINEON |
23+ |
7000 |
|||||
UTC/友顺 |
25+ |
TO-220 |
55000 |
UTC/友顺6N60L-A-TA3-T即刻询购立享优惠#长期有货 |
|||
UTC/友顺 |
2022+ |
TO-220 |
7500 |
原厂代理 终端免费提供样品 |
|||
AAT |
24+ |
TO-220 |
6430 |
原装现货/欢迎来电咨询 |
|||
INMET |
23+ |
N(MF) |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
6N60规格书下载地址
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6N60数据表相关新闻
6N65L-TO220FT-TG_UTC代理商
6N65L-TO220FT-TG_UTC代理商
2023-2-36N90G-TO220F.4T-TG
6N90G-TO220F.4T-TG
2023-1-316N65L-TO251ST-TGP
6N65L-TO251ST-TGP
2023-1-306N140A/883B DIP16 AVAGO/安华高 隔离芯片 全新正品 进口原装
原装正品现货供应 0755-28892389/13713856319；QQ:2639752116；微信：13713856319；
2021-5-146N140A/883B
4 A逻辑输出光电耦合器，TLP627M逻辑输出光电耦合器，TLP5754 450 mW逻辑输出光电耦合器，5000 Vrms SOP-6 1通道10 mA 4 A逻辑输出光电耦合器，4通道逻辑输出光电耦合器，图腾柱，缓冲器DIP-8 1通道2.5 A逻辑输出光耦合器
2020-8-276N139SDM进口光藕直插贴片大量现货
6N139SDM HCPL-7800 HCPL-7840 HCPL-7860 HCPL0601
2019-11-15
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