位置：首页 > IC中文资料第5633页 > 6N60
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
6N60 | 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications | UTC 友顺 |   | |
6N60 | Avalanche Energy Specified DESCRITION · Designed for high efficiency switch mode power supply. FEATURES · Drain Current –ID= 6A@ TC=25℃ · Drain Source Voltage-: VDSS= 600V(Min) · Static Drain-Source On-Resistance : RDS(on) = 1.2Ω (Max) · Avalanche Energy Specified · Fast Switching · Simple Drive Requirements | ISC 无锡固电 | | |
6N60 | 6.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applicati | SYC | | |
6N60 | 6.2A, 600V N-CHANNEL POWER MOSFET | UTC 友顺 | | |
6N60 | 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET 文件：249.26 Kbytes Page：6 Pages | UTC 友顺 | | |
6N60 | 6A mps,600 Volts N-CHANNEL MOSFET 文件：193.16 Kbytes Page：2 Pages | CHONGQING 平伟实业 | | |
6N60 | 6.2A, 600V N-CHANNEL POWER MOSFET 文件：254.42 Kbytes Page：6 Pages | UTC 友顺 | | |
6N60 | N-CHANNEL POWER MOSFET 文件：2.10805 Mbytes Page：7 Pages | SUNMATE 森美特 | | |
6N60 | N-CHANNEL MOSFET 文件：219.8 Kbytes Page：6 Pages | ARTSCHIP | | |
6N60 | 600V N-Channel Power MOSFET 文件：1.88521 Mbytes Page：8 Pages | DYELEC 迪一电子 | | |
6N60 | N-CHANNEL POWER MOSFET 文件：460.3 Kbytes Page：6 Pages | ZSELEC 淄博圣诺 | | |
6N60 | N-Channel Power MOSFET 文件：486.21 Kbytes Page：10 Pages | NELLSEMI 尼尔半导体 | | |
6N60 | N-Channel 600V (D-S) Power MOSFET 文件：1.0803 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | |
6.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications | UTC 友顺 | | ||
6.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications | UTC 友顺 | | ||
6.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications | UTC 友顺 | | ||
6.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications | UTC 友顺 | | ||
600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchildís proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching p | Fairchild 仙童半导体 | | ||
N-CHANNEL SILICON POWER MOSFET Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applica | Fuji 富士通 | | ||
6.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications | UTC 友顺 | | ||
6.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications | UTC 友顺 | | ||
6.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications | UTC 友顺 | | ||
6.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications | UTC 友顺 | | ||
N-channel 600 V, 1.00 typ., 5.5 A MDmesh M2 Power MOSFET in an SOT223-2 package Features • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the de | STMICROELECTRONICS 意法半导体 | | ||
6.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in swi | UTC 友顺 | | ||
6.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in swi | UTC 友顺 | | ||
6.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in swi | UTC 友顺 | | ||
6.2 Amps, 600/650 Volts N-CHANNEL MOSFET 文件：249.26 Kbytes Page：6 Pages | UTC 友顺 | | ||
6.2A, 600V N-CHANNEL POWER MOSFET 文件：254.42 Kbytes Page：6 Pages | UTC 友顺 | | ||
6A 600V N-channel enhanced field effect transistor 文件：1.12341 Mbytes Page：7 Pages | YFWDIODE 佑风微 | | ||
N-Channel Power MOSFET 文件：486.21 Kbytes Page：10 Pages | NELLSEMI 尼尔半导体 | | ||
N-Channel Power MOSFET 文件：486.21 Kbytes Page：10 Pages | NELLSEMI 尼尔半导体 | | ||
N-CHANNEL MOSFET 文件：219.8 Kbytes Page：6 Pages | ARTSCHIP | | ||
6A mps,600 Volts N-CHANNEL MOSFET 文件：193.16 Kbytes Page：2 Pages | CHONGQING 平伟实业 | | ||
N-CHANNEL MOSFET 文件：219.8 Kbytes Page：6 Pages | ARTSCHIP | | ||
N-CHANNEL POWER MOSFET 文件：225.14 Kbytes Page：7 Pages | UTC 友顺 | | ||
6A mps,600 Volts N-CHANNEL MOSFET 文件：193.16 Kbytes Page：2 Pages | CHONGQING 平伟实业 | | ||
N-CHANNEL POWER MOSFET 文件：2.10805 Mbytes Page：7 Pages | SUNMATE 森美特 | | ||
N-Channel Power MOSFET 文件：486.21 Kbytes Page：10 Pages | NELLSEMI 尼尔半导体 | | ||
N-CHANNEL POWER MOSFET 文件：2.10805 Mbytes Page：7 Pages | SUNMATE 森美特 | | ||
N-Channel Power MOSFET 文件：486.21 Kbytes Page：10 Pages | NELLSEMI 尼尔半导体 | | ||
N-CHANNEL POWER MOSFET 文件：264.93 Kbytes Page：7 Pages | UTC 友顺 | | ||
6.2A, 600V N-CHANNEL POWER MOSFET 文件：254.42 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：264.93 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：225.14 Kbytes Page：7 Pages | UTC 友顺 | | ||
6.2A, 600V N-CHANNEL POWER MOSFET 文件：254.42 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：264.93 Kbytes Page：7 Pages | UTC 友顺 | | ||
6.2A, 600V N-CHANNEL POWER MOSFET 文件：254.42 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：225.14 Kbytes Page：7 Pages | UTC 友顺 | | ||
6.2A, 600V N-CHANNEL POWER MOSFET 文件：254.42 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：264.93 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：264.93 Kbytes Page：7 Pages | UTC 友顺 | | ||
6.2A, 600V N-CHANNEL POWER MOSFET 文件：254.42 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：225.14 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：225.14 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：225.14 Kbytes Page：7 Pages | UTC 友顺 | | ||
6.2A, 600V N-CHANNEL POWER MOSFET 文件：254.42 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：264.93 Kbytes Page：7 Pages | UTC 友顺 | | ||
6.2A, 600V N-CHANNEL POWER MOSFET 文件：254.42 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：264.93 Kbytes Page：7 Pages | UTC 友顺 | |
6N60产品属性
- 类型
描述
- 型号
6N60
- 制造商
UTC-IC
- 制造商全称
UTC-IC
- 功能描述
6.2 Amps, 600/650 Volts N-CHANNEL MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AAT |
24+ |
TO-220 |
6430 |
原装现货/欢迎来电咨询 |
|||
UTC/友顺 |
24+ |
TO-220 |
60000 |
||||
AAT |
24+ |
TO-220/F |
50000 |
原装现货假一罚十 |
|||
UTC/友顺 |
23+ |
TO220F |
50000 |
全新原装正品现货,支持订货 |
|||
VBsemi |
24+ |
TO220 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
UTC/友顺 |
23+ |
TO-252 |
79999 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
24+ |
N/A |
64000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
12+ |
TO-263 |
15000 |
全新原装,绝对正品,公司现货供应。 |
||||
SILAN/士兰微 |
22+ |
TO-220F-3L;TO-252-2L |
150000 |
挂的就有,常备现货 |
|||
UTC(友顺) |
2447 |
TO-220F(TO-220IS) |
105000 |
50个/管一级代理专营品牌!原装正品,优势现货,长期 |
6N60规格书下载地址
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6N60数据表相关新闻
6N65L-TO220FT-TG_UTC代理商
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2023-1-306N140A/883B DIP16 AVAGO/安华高 隔离芯片 全新正品 进口原装
原装正品现货供应 0755-28892389/13713856319；QQ:2639752116；微信：13713856319；
2021-5-146N140A/883B
4 A逻辑输出光电耦合器，TLP627M逻辑输出光电耦合器，TLP5754 450 mW逻辑输出光电耦合器，5000 Vrms SOP-6 1通道10 mA 4 A逻辑输出光电耦合器，4通道逻辑输出光电耦合器，图腾柱，缓冲器DIP-8 1通道2.5 A逻辑输出光耦合器
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2019-11-15
DdatasheetPDF页码索引
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