型号 功能描述 生产厂家&企业 LOGO 操作
6N60

6.2 Amps, 600/650 Volts N-CHANNEL MOSFET

 DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

UTC

友顺

6N60

Avalanche Energy Specified

DESCRITION · Designed for high efficiency switch mode power supply. FEATURES · Drain Current –ID= 6A@ TC=25℃ · Drain Source Voltage-: VDSS= 600V(Min) · Static Drain-Source On-Resistance : RDS(on) = 1.2Ω (Max) · Avalanche Energy Specified · Fast Switching · Simple Drive Requirements

ISC

无锡固电

6N60

6.2A, 600V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applicati

SYC

6N60

6.2 Amps, 600/650 Volts N-CHANNEL MOSFET

文件:249.26 Kbytes Page:6 Pages

UTC

友顺

6N60

6A mps,600 Volts N-CHANNEL MOSFET

文件:193.16 Kbytes Page:2 Pages

CHONGQING

重庆平伟实业

6N60

6.2A, 600V N-CHANNEL POWER MOSFET

文件:254.42 Kbytes Page:6 Pages

UTC

友顺

6N60

N-CHANNEL POWER MOSFET

文件:2.10805 Mbytes Page:7 Pages

SUNMATE

森美特

6N60

N-CHANNEL MOSFET

文件:219.8 Kbytes Page:6 Pages

ARTSCHIP

6N60

600V N-Channel Power MOSFET

文件:1.88521 Mbytes Page:8 Pages

DYELECDIYI Electronic Technology Co., Ltd.

迪一电子山东迪一电子科技有限公司

6N60

N-CHANNEL POWER MOSFET

文件:460.3 Kbytes Page:6 Pages

ZSELEC

淄博圣诺电子

6N60

N-Channel Power MOSFET

文件:486.21 Kbytes Page:10 Pages

NELLSEMI

尼尔半导体

6N60

N-Channel 600V (D-S) Power MOSFET

文件:1.0803 Mbytes Page:9 Pages

VBSEMI

微碧半导体

6.2 Amps, 600/650 Volts N-CHANNEL MOSFET

 DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

UTC

友顺

6.2 Amps, 600/650 Volts N-CHANNEL MOSFET

 DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

UTC

友顺

6.2 Amps, 600/650 Volts N-CHANNEL MOSFET

 DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

UTC

友顺

6.2 Amps, 600/650 Volts N-CHANNEL MOSFET

 DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

UTC

友顺

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchildís proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching p

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applica

Fuji

富士电机

6.2 Amps, 600/650 Volts N-CHANNEL MOSFET

 DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

UTC

友顺

6.2 Amps, 600/650 Volts N-CHANNEL MOSFET

 DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

UTC

友顺

6.2 Amps, 600/650 Volts N-CHANNEL MOSFET

 DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

UTC

友顺

6.2 Amps, 600/650 Volts N-CHANNEL MOSFET

 DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

UTC

友顺

N-channel 600 V, 1.00 typ., 5.5 A MDmesh M2 Power MOSFET in an SOT223-2 package

Features • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the de

STMICROELECTRONICS

意法半导体

6.2A, 600V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 6N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in swi

UTC

友顺

6.2A, 600V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 6N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in swi

UTC

友顺

6.2A, 600V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 6N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in swi

UTC

友顺

6.2 Amps, 600/650 Volts N-CHANNEL MOSFET

文件:249.26 Kbytes Page:6 Pages

UTC

友顺

6.2A, 600V N-CHANNEL POWER MOSFET

文件:254.42 Kbytes Page:6 Pages

UTC

友顺

6A 600V N-channel enhanced field effect transistor

文件:1.12341 Mbytes Page:7 Pages

YFWDIODE

佑风微电子

N-Channel Power MOSFET

文件:486.21 Kbytes Page:10 Pages

NELLSEMI

尼尔半导体

N-Channel Power MOSFET

文件:486.21 Kbytes Page:10 Pages

NELLSEMI

尼尔半导体

N-CHANNEL MOSFET

文件:219.8 Kbytes Page:6 Pages

ARTSCHIP

6A mps,600 Volts N-CHANNEL MOSFET

文件:193.16 Kbytes Page:2 Pages

CHONGQING

重庆平伟实业

N-CHANNEL MOSFET

文件:219.8 Kbytes Page:6 Pages

ARTSCHIP

N-CHANNEL POWER MOSFET

文件:225.14 Kbytes Page:7 Pages

UTC

友顺

6A mps,600 Volts N-CHANNEL MOSFET

文件:193.16 Kbytes Page:2 Pages

CHONGQING

重庆平伟实业

N-CHANNEL POWER MOSFET

文件:2.10805 Mbytes Page:7 Pages

SUNMATE

森美特

N-Channel Power MOSFET

文件:486.21 Kbytes Page:10 Pages

NELLSEMI

尼尔半导体

N-CHANNEL POWER MOSFET

文件:2.10805 Mbytes Page:7 Pages

SUNMATE

森美特

N-Channel Power MOSFET

文件:486.21 Kbytes Page:10 Pages

NELLSEMI

尼尔半导体

N-CHANNEL POWER MOSFET

文件:264.93 Kbytes Page:7 Pages

UTC

友顺

6.2A, 600V N-CHANNEL POWER MOSFET

文件:254.42 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:264.93 Kbytes Page:7 Pages

UTC

友顺

6.2A, 600V N-CHANNEL POWER MOSFET

文件:254.42 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:225.14 Kbytes Page:7 Pages

UTC

友顺

6.2A, 600V N-CHANNEL POWER MOSFET

文件:254.42 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:264.93 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:264.93 Kbytes Page:7 Pages

UTC

友顺

6.2A, 600V N-CHANNEL POWER MOSFET

文件:254.42 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:225.14 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:264.93 Kbytes Page:7 Pages

UTC

友顺

6.2A, 600V N-CHANNEL POWER MOSFET

文件:254.42 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:225.14 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:225.14 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:225.14 Kbytes Page:7 Pages

UTC

友顺

6.2A, 600V N-CHANNEL POWER MOSFET

文件:254.42 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:264.93 Kbytes Page:7 Pages

UTC

友顺

6.2A, 600V N-CHANNEL POWER MOSFET

文件:254.42 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:264.93 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:264.93 Kbytes Page:7 Pages

UTC

友顺

6N60产品属性

  • 类型

    描述

  • 型号

    6N60

  • 制造商

    UTC-IC

  • 制造商全称

    UTC-IC

  • 功能描述

    6.2 Amps, 600/650 Volts N-CHANNEL MOSFET

更新时间:2025-8-9 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NIKOS
24+
NA/
15000
优势代理渠道,原装正品,可全系列订货开增值税票
OKI
23+
PLCC
1122
全新原装假一赔十
UTC/友顺
25+
TO-220
55000
UTC/友顺6N60L-A-TA3-T即刻询购立享优惠#长期有货
SILAN/士兰微
22+
TO-220F-3L;TO-252-2L
150000
挂的就有,常备现货
UTC/友顺
22+
TO-220
25000
只有原装原装,支持BOM配单
TO-220F
23+
NA
15659
振宏微专业只做正品,假一罚百!
F
25+
TOP220
4500
全新原装、诚信经营、公司现货销售
FAIFCHILD
24+
TO-220
90000
一级代理商进口原装现货、价格合理
REASUNOS
1948+
TO-252
18562
只做原装正品现货!或订货假一赔十!
INMET
2023+
N(M/F)
25
weinschel 衰减器库存大量现货,欢迎电寻

6N60数据表相关新闻