N-channel 620 V, 1.28 ohm, 4.2 A SuperMESH3 Power MOSFET

Description These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic perf

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4.2A@ TC=25℃ ·Drain Source Voltage -VDSS=620V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 1.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N沟道620 V、1.28 Ohm典型值、4.2 A SuperMESH3(TM) 功率MOSFET，TO-220FP封装

N-channel 620 V, 1.28 ohm, 4.2 A SuperMESH3 Power MOSFET

Description These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic perf

N-channel 620 V, 1.28 ohm, 4.2 A SuperMESH3 Power MOSFET

Description These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic perf

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4.2A@ TC=25℃ ·Drain Source Voltage -VDSS=620V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 1.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel 650V (D-S) Power MOSFET

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N-Channel 650V (D-S)Power MOSFET

文件：1.10908 Mbytes Page：10 Pages