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STP5N62K3价格
参考价格：￥5.0833
型号：STP5N62K3 品牌：STMicroelectronics 备注：这里有STP5N62K3多少钱，2025年最近7天走势，今日出价，今日竞价，STP5N62K3批发/采购报价，STP5N62K3行情走势销售排行榜，STP5N62K3报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STP5N62K3 | N-channel 620 V, 1.28 ohm, 4.2 A SuperMESH3 Power MOSFET Description These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic perf | STMICROELECTRONICS 意法半导体 |   | |
STP5N62K3 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 4.2A@ TC=25℃ ·Drain Source Voltage -VDSS=620V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 1.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
STP5N62K3 | N-channel 620 V, 1.28 Ohm typ., 4.2 A SuperMESH3(TM) Power MOSFET in TO-220 package | STMICROELECTRONICS 意法半导体 | | |
N-channel 620 V, 1.28 ohm, 4.2 A SuperMESH3 Power MOSFET Description These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic perf | STMICROELECTRONICS 意法半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 4.2A@ TC=25℃ ·Drain Source Voltage -VDSS=620V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 1.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N-channel 620 V, 1.28 ohm, 4.2 A SuperMESH3 Power MOSFET Description These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic perf | STMICROELECTRONICS 意法半导体 | | ||
N-Channel 650V (D-S) Power MOSFET 文件：1.10806 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 650V (D-S)Power MOSFET 文件：1.10908 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | |
STP5N62K3产品属性
- 类型
描述
- 型号
STP5N62K3
- 功能描述
MOSFET N-Ch 620V 1.28 Ohm SuperMESH3 4.3A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
ST/意法 |
2223+ |
TO-220 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
STM |
23+ |
TO-220-3 |
50000 |
原装正品 支持实单 |
|||
STN |
2526+ |
原厂封装 |
350 |
只做原装优势现货库存 渠道可追溯 |
|||
ST/意法 |
21+ |
TO-220 |
5000 |
优势供应 实单必成 可开增值税13点 |
|||
ST |
25+23+ |
TO220 |
20180 |
绝对原装正品全新进口深圳现货 |
|||
ST/意法 |
24+ |
TO-220-3 |
1000 |
只做原装，欢迎询价，量大价优 |
|||
ST/意法 |
2025+ |
TO-220-3 |
950 |
原装进口价格优 请找坤融电子! |
|||
ST/意法 |
22+ |
N/A |
12245 |
现货,原厂原装假一罚十! |
|||
ST/意法 |
20+ |
TO-220 |
32500 |
现货很近!原厂很远!只做原装 |
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STP5N62K3规格书下载地址
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DdatasheetPDF页码索引
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