isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=4.4A@ TC=25℃ ·Drain Source Voltage -VDSS=525V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel 525 V, 1.2 ohm, 4.4 A SuperMESH3 Power MOSFET

Description These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic perf

N-channel 525 V, 1.2 ohm, 4.4 A SuperMESH3 Power MOSFET

Description These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic perf

N沟道525 V、1.2 Ohm典型值、4.4 A SuperMESH3(TM) 功率MOSFET，DPAK封装

This MDmesh K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the m • 100% avalanche tested \n• Extremely high dv/dt capability \n• Very low intrinsic capacitance \n• Improved diode reverse recovery characteristics \n• Zener-protected;

N-channel 525 V, 1.2 廓, 4.4 A SuperMESH3??Power MOSFET D짼PAK, DPAK, TO-220FP, TO-220, IPAK

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N-channel 525 V, 1.28 ohm, 4.4 A, DPAK, TO-220FP, I2PAK UltraFASTmesh Power MOSFET

Description These devices are N-channel Power MOSFETs developed using UltraFASTmesh™ technology, which combines the advantages of reduced on resistance, Zener gate protection and very high dv/dt capability with an enhanced fast body-drain recovery diode. Features ■ 100 avalanche tested ■ Outst

N-channel 525 V, 1.25 Ω typ., 4.4 A, UltraFASTmesh™ Power MOSFET in a TO-220FP package

Features Outstanding dv/dt capability Gate charge minimized Very low intrinsic capacitances Very low RDS(on) Extremely low trr Applications Switching applications Description This device is N-channel Power MOSFET developed using UltraFASTmesh™ technology, which combines the advantage

N-channel 525 V, 1.28 ohm, 4.4 A, DPAK, TO-220FP, I2PAK UltraFASTmesh Power MOSFET

Description These devices are N-channel Power MOSFETs developed using UltraFASTmesh™ technology, which combines the advantages of reduced on resistance, Zener gate protection and very high dv/dt capability with an enhanced fast body-drain recovery diode. Features ■ 100 avalanche tested ■ Outst

N-channel 525 V, 1.28 ohm, 4.4 A, DPAK, TO-220FP, I2PAK UltraFASTmesh Power MOSFET

Description These devices are N-channel Power MOSFETs developed using UltraFASTmesh™ technology, which combines the advantages of reduced on resistance, Zener gate protection and very high dv/dt capability with an enhanced fast body-drain recovery diode. Features ■ 100 avalanche tested ■ Outst

Power MOSFET

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