N-channel 525 V, 1.28 ohm, 4.4 A, DPAK, TO-220FP, I2PAK UltraFASTmesh Power MOSFET

Description These devices are N-channel Power MOSFETs developed using UltraFASTmesh™ technology, which combines the advantages of reduced on resistance, Zener gate protection and very high dv/dt capability with an enhanced fast body-drain recovery diode. Features ■ 100 avalanche tested ■ Outst

N沟道525 V、1.28 Ohm、4.4 A UltraFASTmesh(TM) 功率MOSFET，DPAK封装

This device is N-channel Power MOSFET developed using UltraFASTmesh technology, which combines the advantages of reduced on resistance, Zener gate protection and very high dv/dt capability with an enhanced fast body-drain recovery diode. • Outstanding dv/dt capability \n• Gate charge minimized \n• Very low intrinsic capacitances \n• Very low RDS(on) \n• Extremely low trr;

Power MOSFET

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N-channel 525 V, 1.25 Ω typ., 4.4 A, UltraFASTmesh™ Power MOSFET in a TO-220FP package

Features Outstanding dv/dt capability Gate charge minimized Very low intrinsic capacitances Very low RDS(on) Extremely low trr Applications Switching applications Description This device is N-channel Power MOSFET developed using UltraFASTmesh™ technology, which combines the advantage

N-channel 525 V, 1.28 ohm, 4.4 A, DPAK, TO-220FP, I2PAK UltraFASTmesh Power MOSFET

Description These devices are N-channel Power MOSFETs developed using UltraFASTmesh™ technology, which combines the advantages of reduced on resistance, Zener gate protection and very high dv/dt capability with an enhanced fast body-drain recovery diode. Features ■ 100 avalanche tested ■ Outst

N-channel 525 V, 1.28 ohm, 4.4 A, DPAK, TO-220FP, I2PAK UltraFASTmesh Power MOSFET

Description These devices are N-channel Power MOSFETs developed using UltraFASTmesh™ technology, which combines the advantages of reduced on resistance, Zener gate protection and very high dv/dt capability with an enhanced fast body-drain recovery diode. Features ■ 100 avalanche tested ■ Outst

Power MOSFET

文件：1.07614 Mbytes Page：9 Pages