Features

Outstanding dv/dt capability

Gate charge minimized

Very low intrinsic capacitances

Very low RDS(on)

Extremely low trr

Applications

Switching applications

Description

This device is N-channel Power MOSFET developed using UltraFASTmesh™

technology, which combines the advantages of reduced on resistance, Zener gate

protection and very high dv/dt capability with an enhanced fast body-drain recovery

diode.