Description

These devices are N-channel Power MOSFETs developed using UltraFASTmesh™ technology, which combines the advantages of reduced on resistance, Zener gate protection and very high dv/dt capability with an enhanced fast body-drain recovery diode.

Features

■ 100 avalanche tested

■ Outstanding dv/dt capability

■ Gate charge minimized

■ Very low intrinsic capacitances

■ Very low RDS(on)

■ Extremely low trr

Applications

■ Switching applications

– High voltage inverters specific fo LCD TV

– Lighting full bridge topology

– Motor control