N-CHANNEL 60V - 0.032OHM - 24A DPAK STripFET TM II POWER MOSFET

文件：342.91 Kbytes Page：13 Pages

N-Channel MOSFET uses advanced trench technology

文件：2.38019 Mbytes Page：5 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 24A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 40mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

60V N-Channel Enhancement ModePowerMOSFET

General Description The STD20NF06L uses advanced trench technology and design to provide excellent RDS(ON) with low gate cha rge. It can be used in a wide variety of applications. Features VDS = 60V,ID =30A RDS(ON),25mΩ(Typ) @ VGS =10V RDS(ON),30mΩ(Typ) @ VGS =4.5V Advanced Trench Technolo

60V N-Channel Enhancement Mode Power MOSFET

General Description The STD20NF06L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =30A RDS(ON),25mΩ(Typ) @ VGS =10V RDS(ON),30mΩ(Typ) @ VGS =4.5V Advanced Trench Technol

N-channel 60V - 0.032OHM - 24A - DPAK - IPAK STripFET II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

N-channel 60V - 0.032OHM - 24A - DPAK - IPAK STripFET II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

Automotive-grade N-channel 60 V, 32 mΩ typ., 24 A, STripFET II Power MOSFET in a DPAK package

Features • AEC-Q101 qualified • Exceptional dv/dt capability • 100 avalanche tested • Low gate charge Applications • Switching applications Description This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize in

N-channel 60V - 0.032廓 - 24A - DPAK - IPAK STripFET??II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

N沟道60V - 0.032 - 24A STripFET™ II MOSFET

N-Channel 60 V (D-S) MOSFET

文件：963.83 Kbytes Page：7 Pages

汽车级N沟道60 V、32 mOhm典型值、24 A STripFET II功率MOSFET，DPAK封装

N-Channel 60-V (D-S) MOSFET

文件：899.01 Kbytes Page：6 Pages

N-Channel 60-V (D-S) MOSFET

文件：898.99 Kbytes Page：6 Pages

N-channel 60 V, 0.032 Ohm typ., 24 A Power MOSFET in DPAK package

N-CHANNEL 60V - 0.032OHM - 24A DPAK STripFET TM II POWER MOSFET

文件：342.91 Kbytes Page：13 Pages

N-channel 60V - 0.032OHM - 24A - DPAK - IPAK STripFET II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

N-channel 60V - 0.06廓 - 20A - D2PAK/TO-220/TO-220FP STripFET??II Power MOSFET

文件：395.82 Kbytes Page：16 Pages