TWO-CHANNEL HD AUDIO CODEC WITH MODEM & DUAL DIGITAL MICROPHONE INTERFACES

文件：1.01802 Mbytes Page：137 Pages

TWO-CHANNEL HD AUDIO CODEC WITH MODEM & DUAL DIGITAL MICROPHONE INTERFACES

TWO-CHANNEL HD AUDIO CODEC WITH MODEM & DUAL DIGITAL MICROPHONE INTERFACES

文件：1.01802 Mbytes Page：137 Pages

TWO-CHANNEL HD AUDIO CODEC WITH MODEM & DUAL DIGITAL MICROPHONE INTERFACES

文件：1.01802 Mbytes Page：137 Pages

TWO-CHANNEL HD AUDIO CODEC WITH MODEM & DUAL DIGITAL MICROPHONE INTERFACES

文件：1.01802 Mbytes Page：137 Pages

TWO-CHANNEL HD AUDIO CODEC WITH MODEM & DUAL DIGITAL MICROPHONE INTERFACES

文件：1.01802 Mbytes Page：137 Pages

14A, -200V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs

Description The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutro

16A, -200V, 0.300 Ohm, Rad Hard, P-Channel Power MOSFETs

Description Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron ha

CD Player Analog Signal Processor (ASP)

Overview The LA9250M is a servo signal-processing IC for CD players. In combination with a CD DSP such as the LC78626KE, it can implement a CD player with a minimal number of external components. Features • Low-voltage operation: 2.4 V (minimum) • Low current drain: 15 mA (at VCC = 3.0 V, typi

Advanced Power MOSFET

FEATURES ❑ Logic-Level Gate Drive ❑ Avalanche Rugged Technology ❑ Rugged Gate Oxide Technology ❑ Lower Input Capacitances ❑ Improved Gate Charge ❑ Extended Safe Operating Area ❑ Lower Leakage Current : 10uA (Max.) @ VDS=-200V ❑ Lower RDS(ON) : 0.175 Ω (Typ.)

Advanced Power MOSFET

FEATURES ❑ Logic-Level Gate Drive ❑ Avalanche Rugged Technology ❑ Rugged Gate Oxide Technology ❑ Lower Input Capacitances ❑ Improved Gate Charge ❑ Extended Safe Operating Area ❑ Lower Leakage Current : 10uA (Max.) @ VDS=-200V ❑ Lower RDS(ON) : 0.175 Ω (Typ.)