FEATURES

❑ Logic-Level Gate Drive

❑ Avalanche Rugged Technology

❑ Rugged Gate Oxide Technology

❑ Lower Input Capacitances

❑ Improved Gate Charge

❑ Extended Safe Operating Area

❑ Lower Leakage Current : 10uA (Max.) @ VDS=-200V

❑ Lower RDS(ON) : 0.175 Ω (Typ.)