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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SST36VF1601 | 16 Mbit Concurrent SuperFlash PRODUCT DESCRIPTION The SST36VF1601/1602 are 1M x16 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with | SST Silicon Storage Technology, Inc |   | |
SST36VF1601 | 16 Megabit Concurrent SuperFlash PRODUCT DESCRIPTION The SST36VF1601/1602 are 1M x16 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with | SST Silicon Storage Technology, Inc | | |
SST36VF1601 | 16 Mbit Concurrent SuperFlash | SST Silicon Storage Technology, Inc | | |
16 Mbit Concurrent SuperFlash PRODUCT DESCRIPTION The SST36VF1601/1602 are 1M x16 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with | SST Silicon Storage Technology, Inc | | ||
16 Megabit Concurrent SuperFlash PRODUCT DESCRIPTION The SST36VF1601/1602 are 1M x16 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with | SST Silicon Storage Technology, Inc | | ||
16 Megabit Concurrent SuperFlash PRODUCT DESCRIPTION The SST36VF1601/1602 are 1M x16 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with | SST Silicon Storage Technology, Inc | | ||
16 Mbit Concurrent SuperFlash PRODUCT DESCRIPTION The SST36VF1601/1602 are 1M x16 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with | SST Silicon Storage Technology, Inc | | ||
16 Mbit Concurrent SuperFlash PRODUCT DESCRIPTION The SST36VF1601/1602 are 1M x16 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with | SST Silicon Storage Technology, Inc | | ||
16 Megabit Concurrent SuperFlash PRODUCT DESCRIPTION The SST36VF1601/1602 are 1M x16 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with | SST Silicon Storage Technology, Inc | | ||
16 Megabit Concurrent SuperFlash PRODUCT DESCRIPTION The SST36VF1601/1602 are 1M x16 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with | SST Silicon Storage Technology, Inc | | ||
16 Mbit Concurrent SuperFlash PRODUCT DESCRIPTION The SST36VF1601/1602 are 1M x16 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with | SST Silicon Storage Technology, Inc | | ||
16 Megabit Concurrent SuperFlash PRODUCT DESCRIPTION The SST36VF1601/1602 are 1M x16 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with | SST Silicon Storage Technology, Inc | | ||
16 Megabit Concurrent SuperFlash PRODUCT DESCRIPTION The SST36VF1601/1602 are 1M x16 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with | SST Silicon Storage Technology, Inc | | ||
16 Megabit Concurrent SuperFlash PRODUCT DESCRIPTION The SST36VF1601/1602 are 1M x16 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with | SST Silicon Storage Technology, Inc | | ||
16 Megabit Concurrent SuperFlash PRODUCT DESCRIPTION The SST36VF1601/1602 are 1M x16 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with | SST Silicon Storage Technology, Inc | | ||
16 Mbit (x8/x16) Dual-Bank Flash Memory PRODUCT DESCRIPTION The SST36VF1601C and SST36VF1602C are 1M x16 or 2M x8 CMOS Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS Super Flash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability | SST Silicon Storage Technology, Inc | | ||
16 Mbit (x8/x16) Dual-Bank Flash Memory PRODUCT DESCRIPTION The SST36VF1601C and SST36VF1602C are 1M x16 or 2M x8 CMOS Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS Super Flash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability | SST Silicon Storage Technology, Inc | | ||
16 Mbit (x8/x16) Dual-Bank Flash Memory PRODUCT DESCRIPTION The SST36VF1601C and SST36VF1602C are 1M x16 or 2M x8 CMOS Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS Super Flash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability | SST Silicon Storage Technology, Inc | | ||
16 Mbit (x8/x16) Dual-Bank Flash Memory PRODUCT DESCRIPTION The SST36VF1601C and SST36VF1602C are 1M x16 or 2M x8 CMOS Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS Super Flash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability | SST Silicon Storage Technology, Inc | | ||
16 Mbit (x8/x16) Dual-Bank Flash Memory PRODUCT DESCRIPTION The SST36VF1601C and SST36VF1602C are 1M x16 or 2M x8 CMOS Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS Super Flash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability | SST Silicon Storage Technology, Inc | | ||
16 Mbit (x8/x16) Concurrent SuperFlash PRODUCT DESCRIPTION The SST36VF1601E and SST36VF1602E are 1M x16 or 2M x8 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash memory technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and ma | SST Silicon Storage Technology, Inc | | ||
16 Mbit (x8/x16) Concurrent SuperFlash PRODUCT DESCRIPTION The SST36VF1601E and SST36VF1602E are 1M x16 or 2M x8 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash memory technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and ma | SST Silicon Storage Technology, Inc | | ||
16 Mbit (x8/x16) Concurrent SuperFlash PRODUCT DESCRIPTION The SST36VF1601E and SST36VF1602E are 1M x16 or 2M x8 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash memory technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and ma | SST Silicon Storage Technology, Inc | | ||
16 Mbit (x8/x16) Concurrent SuperFlash PRODUCT DESCRIPTION The SST36VF1601E and SST36VF1602E are 1M x16 or 2M x8 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash memory technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and ma | SST Silicon Storage Technology, Inc | | ||
16 Mbit (x8/x16) Concurrent SuperFlash PRODUCT DESCRIPTION The SST36VF1601E and SST36VF1602E are 1M x16 or 2M x8 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash memory technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and ma | SST Silicon Storage Technology, Inc | | ||
16 Mbit (x8/x16) Concurrent SuperFlash PRODUCT DESCRIPTION The SST36VF1601G and SST36VF1602G are 1M x16 or 2M x8 CMOS Concurrent Read/Write Flash Memory manufactured with SST proprietary, high performance CMOS SuperFlash memory technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manu | SST Silicon Storage Technology, Inc | | ||
16 Mbit (x8/x16) Concurrent SuperFlash PRODUCT DESCRIPTION The SST36VF1601G and SST36VF1602G are 1M x16 or 2M x8 CMOS Concurrent Read/Write Flash Memory manufactured with SST proprietary, high performance CMOS SuperFlash memory technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manu | SST Silicon Storage Technology, Inc | | ||
16 Mbit (x8/x16) Concurrent SuperFlash PRODUCT DESCRIPTION The SST36VF1601G and SST36VF1602G are 1M x16 or 2M x8 CMOS Concurrent Read/Write Flash Memory manufactured with SST proprietary, high performance CMOS SuperFlash memory technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manu | SST Silicon Storage Technology, Inc | | ||
16 Mbit (x8/x16) Concurrent SuperFlash PRODUCT DESCRIPTION The SST36VF1601G and SST36VF1602G are 1M x16 or 2M x8 CMOS Concurrent Read/Write Flash Memory manufactured with SST proprietary, high performance CMOS SuperFlash memory technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manu | SST Silicon Storage Technology, Inc | | ||
16 Mbit (x8/x16) Concurrent SuperFlash PRODUCT DESCRIPTION The SST36VF1601G and SST36VF1602G are 1M x16 or 2M x8 CMOS Concurrent Read/Write Flash Memory manufactured with SST proprietary, high performance CMOS SuperFlash memory technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manu | SST Silicon Storage Technology, Inc | | ||
16 Mbit (x8/x16) Concurrent SuperFlash PRODUCT DESCRIPTION The SST36VF1601G and SST36VF1602G are 1M x16 or 2M x8 CMOS Concurrent Read/Write Flash Memory manufactured with SST proprietary, high performance CMOS SuperFlash memory technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manu | SST Silicon Storage Technology, Inc | | ||
16 Mbit (x8/x16) Concurrent SuperFlash PRODUCT DESCRIPTION The SST36VF1601G and SST36VF1602G are 1M x16 or 2M x8 CMOS Concurrent Read/Write Flash Memory manufactured with SST proprietary, high performance CMOS SuperFlash memory technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manu | SST Silicon Storage Technology, Inc | | ||
16 Mbit (x8/x16) Dual-Bank Flash Memory | SST Silicon Storage Technology, Inc | | ||
16 Mbit (x8/x16) Concurrent SuperFlash | SST Silicon Storage Technology, Inc | | ||
16 Mbit (x8/x16) Concurrent SuperFlash 文件：1.57074 Mbytes Page：36 Pages | GREENLIANT 绿芯半导体 | | ||
512 Kbit (64K x8) Page-Write EEPROM 文件：871.45 Kbytes Page：23 Pages | GREENLIANT 绿芯半导体 | |
SST36VF1601产品属性
- 类型
描述
- 型号
SST36VF1601
- 制造商
SST
- 制造商全称
Silicon Storage Technology, Inc
- 功能描述
16 Megabit Concurrent SuperFlash
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SST |
24+ |
TSOP48 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
SST |
23+ |
BGA |
45000 |
||||
SST |
23+ |
NA |
263 |
专做原装正品,假一罚百! |
|||
SST |
BGA |
56520 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
SST |
2026+ |
原厂原封可拆样 |
65248 |
百分百原装现货 实单必成 |
|||
SST |
23+ |
TSOP48 |
6000 |
原装正品假一罚百!可开增票! |
|||
SST |
24+ |
TSOP |
6232 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
SST |
24+ |
BGA |
35200 |
原装现货/放心购买 |
|||
SST |
25+ |
BGA |
3000 |
全新原装、诚信经营、公司现货销售! |
|||
SST |
2025+ |
TSOP |
5378 |
全新原厂原装产品、公司现货销售 |
SST36VF1601芯片相关品牌
SST36VF1601规格书下载地址
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SST34HF1641J-70-4E-L1PE 拓亿芯电子 刘先生 0755-82777855 qq 1774550803
2019-8-29
DdatasheetPDF页码索引
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