位置:SST36VF1601G-70-4I-L1PE > SST36VF1601G-70-4I-L1PE详情

SST36VF1601G-70-4I-L1PE中文资料

厂家型号

SST36VF1601G-70-4I-L1PE

文件大小

935.12Kbytes

页面数量

36

功能描述

16 Mbit (x8/x16) Concurrent SuperFlash

闪存 16M 闪存 1M SRAM Industrial Temp

数据手册

下载地址一下载地址二

简称

SST

生产厂商

Silicon Storage Technology, Inc

中文名称

官网

LOGO

SST36VF1601G-70-4I-L1PE数据手册规格书PDF详情

PRODUCT DESCRIPTION

The SST36VF1601G and SST36VF1602G are 1M x16 or 2M x8 CMOS Concurrent Read/Write Flash Memory manufactured with SST proprietary, high performance CMOS SuperFlash memory technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The devices write (Program or Erase) with a 2.7-3.6V power supply and conform to JEDEC standard pinouts for x8/x16 memories.

FEATURES:

• Organized as 1M x16 or 2M x8

• Dual Bank Architecture for Concurrent

Read/Write Operation

– 16 Mbit Bottom Sector Protection

- SST36VF1601G: 4 Mbit + 12 Mbit

– 16 Mbit Top Sector Protection

- SST36VF1602G: 12 Mbit + 4 Mbit

• Single 2.7-3.6V for Read and Write Operations

• Superior Reliability

– Endurance: 100,000 cycles (typical)

– Greater than 100 years Data Retention

• Low Power Consumption:

– Active Current: 6 mA typical

– Standby Current: 4 µA typical

– Auto Low Power Mode: 4 µA typical

• Hardware Sector Protection/WP# Input Pin

– Protects the 4 outermost sectors (8 KWord)

in the smaller bank by driving WP# low and

unprotects by driving WP# high

• Hardware Reset Pin (RST#)

– Resets the internal state machine to reading

array data

• Byte# Pin

– Selects 8-bit or 16-bit mode

• Sector-Erase Capability

– Uniform 2 KWord sectors

• Chip-Erase Capability

• Block-Erase Capability

– Uniform 32 KWord blocks

• Erase-Suspend / Erase-Resume Capabilities

• Security ID Feature

– SST: 128 bits

– User: 256 Byte

• Fast Read Access Time

– 70 ns

• Latched Address and Data

• Fast Erase and Program (typical):

– Sector-Erase Time: 18 ms

– Block-Erase Time: 18 ms

– Chip-Erase Time: 35 ms

– Program Time: 7 µs

• Automatic Write Timing

– Internal VPP Generation

• End-of-Write Detection

– Toggle Bit

– Data# Polling

– Ready/Busy# pin

• CMOS I/O Compatibility

• Conforms to Common Flash Memory Interface (CFI)

• JEDEC Standards

– Flash EEPROM Pinouts and command sets

• Packages Available

– 48-ball TFBGA (6mm x 8mm)

– 48-lead TSOP (12mm x 20mm)

– 56-ball LFBGA (8mm x 10mm)

• All non-Pb (lead-free) devices are RoHS compliant

SST36VF1601G-70-4I-L1PE产品属性

  • 类型

    描述

  • 型号

    SST36VF1601G-70-4I-L1PE

  • 功能描述

    闪存 16M 闪存 1M SRAM Industrial Temp

  • RoHS

  • 制造商

    ON Semiconductor

  • 数据总线宽度

    1 bit

  • 存储类型

    Flash

  • 存储容量

    2 MB

  • 结构

    256 K x 8

  • 接口类型

    SPI

  • 电源电压-最大

    3.6 V

  • 电源电压-最小

    2.3 V

  • 最大工作电流

    15 mA

  • 工作温度

    - 40 C to + 85 C

  • 安装风格

    SMD/SMT

  • 封装

    Reel

更新时间:2025-6-4 14:50:00
供应商 型号 品牌 批号 封装 库存 备注 价格
SST
22+
BGA
20000
保证原装正品,假一陪十
SST
2447
BGA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
SST
23+
BGA
50000
全新原装正品现货,支持订货
SST
22+
BGA
3000
原装正品,支持实单
SST
24+
NA/
45000
优势代理渠道,原装正品,可全系列订货开增值税票
SST
23+24
BGA
9632
原装正品,原盘原标,提供BOM一站式配单
SST
24+
BGA
5000
只做原装正品现货
SST
25+
原厂原封可拆样
65248
百分百原装现货 实单必成
SST
24+
BGA
6000
只做原装,欢迎询价,量大价优
SST
24+
BGA
6000
全新原装,一手货源,全场热卖!

SST相关芯片制造商

  • SSTSENSING
  • STANDARDHORIZON
  • STANDEX
  • STANFORD
  • Stanley
  • Stannol
  • STANSON
  • STARPOWER
  • STATEK
  • STATSCHIP
  • STC
  • STEALTH_MICROWAVE

Silicon Storage Technology, Inc

中文资料: 7495条

Silicon Storage Technology, Inc. (SST)是SuperFlash®技术的创造者,这是一种创新、高度可靠和多功能的NOR闪存技术。SST是Microchip Technology Inc.的全资子公司,专注于向代工厂、集成器件制造商(IDMs)和无晶圆厂半导体公司授权嵌入式非易失性存储器(NVM)技术,以满足不断增长的汽车、安全智能卡、物联网(IoT)、人工智能(AI)、工业和消费市场中的应用需求。 SST拥有超过190名员工,办事处分布在美国、欧洲和亚洲,设有专门的工艺、设计、测试和可靠性团队,致力于与客户合作,轻松地将其独特、可靠且经过专利保护的技术集成到