位置：首页 > IC中文资料第1090页 > SST36VF1601G
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SST36VF1601G | 16 Mbit (x8/x16) Concurrent SuperFlash PRODUCT DESCRIPTION The SST36VF1601G and SST36VF1602G are 1M x16 or 2M x8 CMOS Concurrent Read/Write Flash Memory manufactured with SST proprietary, high performance CMOS SuperFlash memory technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manu | SST Silicon Storage Technology, Inc |   | |
16 Mbit Concurrent SuperFlash PRODUCT DESCRIPTION The SST36VF1601/1602 are 1M x16 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with | SST Silicon Storage Technology, Inc | | ||
16 Megabit Concurrent SuperFlash PRODUCT DESCRIPTION The SST36VF1601/1602 are 1M x16 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with | SST Silicon Storage Technology, Inc | | ||
16 Mbit (x8/x16) Concurrent SuperFlash PRODUCT DESCRIPTION The SST36VF1601G and SST36VF1602G are 1M x16 or 2M x8 CMOS Concurrent Read/Write Flash Memory manufactured with SST proprietary, high performance CMOS SuperFlash memory technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manu | SST Silicon Storage Technology, Inc | | ||
16 Mbit (x8/x16) Concurrent SuperFlash PRODUCT DESCRIPTION The SST36VF1601G and SST36VF1602G are 1M x16 or 2M x8 CMOS Concurrent Read/Write Flash Memory manufactured with SST proprietary, high performance CMOS SuperFlash memory technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manu | SST Silicon Storage Technology, Inc | | ||
16 Mbit (x8/x16) Concurrent SuperFlash PRODUCT DESCRIPTION The SST36VF1601G and SST36VF1602G are 1M x16 or 2M x8 CMOS Concurrent Read/Write Flash Memory manufactured with SST proprietary, high performance CMOS SuperFlash memory technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manu | SST Silicon Storage Technology, Inc | | ||
16 Mbit (x8/x16) Concurrent SuperFlash PRODUCT DESCRIPTION The SST36VF1601G and SST36VF1602G are 1M x16 or 2M x8 CMOS Concurrent Read/Write Flash Memory manufactured with SST proprietary, high performance CMOS SuperFlash memory technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manu | SST Silicon Storage Technology, Inc | | ||
16 Mbit (x8/x16) Concurrent SuperFlash PRODUCT DESCRIPTION The SST36VF1601G and SST36VF1602G are 1M x16 or 2M x8 CMOS Concurrent Read/Write Flash Memory manufactured with SST proprietary, high performance CMOS SuperFlash memory technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manu | SST Silicon Storage Technology, Inc | | ||
16 Mbit (x8/x16) Concurrent SuperFlash PRODUCT DESCRIPTION The SST36VF1601G and SST36VF1602G are 1M x16 or 2M x8 CMOS Concurrent Read/Write Flash Memory manufactured with SST proprietary, high performance CMOS SuperFlash memory technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manu | SST Silicon Storage Technology, Inc | | ||
16 Mbit (x8/x16) Dual-Bank Flash Memory PRODUCT DESCRIPTION The SST36VF1601C and SST36VF1602C are 1M x16 or 2M x8 CMOS Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS Super Flash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability | SST Silicon Storage Technology, Inc | | ||
16 Mbit (x8/x16) Concurrent SuperFlash 文件：1.57074 Mbytes Page：36 Pages | GreenliantGreenliantsystems,LTD 绿芯半导体绿芯存储科技（厦门）有限公司 | | ||
512 Kbit (64K x8) Page-Write EEPROM 文件：871.45 Kbytes Page：23 Pages | GreenliantGreenliantsystems,LTD 绿芯半导体绿芯存储科技（厦门）有限公司 | |
SST36VF1601G产品属性
- 类型
描述
- 型号
SST36VF1601G
- 功能描述
闪存 16M 闪存 1M SRAM Industrial Temp
- RoHS
否
- 制造商
ON Semiconductor
- 数据总线宽度
1 bit
- 存储类型
Flash
- 存储容量
2 MB
- 结构
256 K x 8
- 接口类型
SPI
- 电源电压-最大
3.6 V
- 电源电压-最小
2.3 V
- 最大工作电流
15 mA
- 工作温度
- 40 C to + 85 C
- 安装风格
SMD/SMT
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SST |
24+ |
NA/ |
3260 |
原厂直销,现货供应,账期支持! |
|||
SST |
2023+ |
BGA |
8635 |
一级代理优势现货,全新正品直营店 |
|||
SST |
25+ |
原厂原封可拆样 |
65248 |
百分百原装现货 实单必成 |
|||
SST |
22+ |
BGA |
3000 |
原装正品,支持实单 |
|||
SST |
25+ |
BGA |
3000 |
全新原装、诚信经营、公司现货销售! |
|||
SST |
22+ |
TSOP |
8000 |
原装现货库存.价格优势 |
|||
SST |
2447 |
TSOP48 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
MICROCHIP |
24+ |
N/A |
8174 |
原装原装原装 |
|||
SST |
24+ |
BGA |
6000 |
全新原装,一手货源,全场热卖! |
|||
SST |
23+ |
BGA |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
SST36VF1601G规格书下载地址
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- SST36VF1602-70-4E-EK
- SST36VF1602-70-4E-BK
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- SST36VF1602
- SST36VF1601G-70-4I-L1PE
- SST36VF1601G-70-4I-EKE
- SST36VF1601G-70-4I-B3KE
- SST36VF1601E-70-4I-EKE
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- SST36VF1601C
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2019-8-29
DdatasheetPDF页码索引
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