位置:SST36VF1601G > SST36VF1601G详情

SST36VF1601G中文资料

厂家型号

SST36VF1601G

文件大小

935.12Kbytes

页面数量

36

功能描述

16 Mbit (x8/x16) Concurrent SuperFlash

闪存 16M 闪存 1M SRAM Industrial Temp

数据手册

下载地址一下载地址二

简称

SST

生产厂商

Silicon Storage Technology, Inc

中文名称

官网

SST36VF1601G数据手册规格书PDF详情

PRODUCT DESCRIPTION

The SST36VF1601G and SST36VF1602G are 1M x16 or 2M x8 CMOS Concurrent Read/Write Flash Memory manufactured with SST proprietary, high performance CMOS SuperFlash memory technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The devices write (Program or Erase) with a 2.7-3.6V power supply and conform to JEDEC standard pinouts for x8/x16 memories.

FEATURES:

• Organized as 1M x16 or 2M x8

• Dual Bank Architecture for Concurrent

Read/Write Operation

– 16 Mbit Bottom Sector Protection

- SST36VF1601G: 4 Mbit + 12 Mbit

– 16 Mbit Top Sector Protection

- SST36VF1602G: 12 Mbit + 4 Mbit

• Single 2.7-3.6V for Read and Write Operations

• Superior Reliability

– Endurance: 100,000 cycles (typical)

– Greater than 100 years Data Retention

• Low Power Consumption:

– Active Current: 6 mA typical

– Standby Current: 4 µA typical

– Auto Low Power Mode: 4 µA typical

• Hardware Sector Protection/WP# Input Pin

– Protects the 4 outermost sectors (8 KWord)

in the smaller bank by driving WP# low and

unprotects by driving WP# high

• Hardware Reset Pin (RST#)

– Resets the internal state machine to reading

array data

• Byte# Pin

– Selects 8-bit or 16-bit mode

• Sector-Erase Capability

– Uniform 2 KWord sectors

• Chip-Erase Capability

• Block-Erase Capability

– Uniform 32 KWord blocks

• Erase-Suspend / Erase-Resume Capabilities

• Security ID Feature

– SST: 128 bits

– User: 256 Byte

• Fast Read Access Time

– 70 ns

• Latched Address and Data

• Fast Erase and Program (typical):

– Sector-Erase Time: 18 ms

– Block-Erase Time: 18 ms

– Chip-Erase Time: 35 ms

– Program Time: 7 µs

• Automatic Write Timing

– Internal VPP Generation

• End-of-Write Detection

– Toggle Bit

– Data# Polling

– Ready/Busy# pin

• CMOS I/O Compatibility

• Conforms to Common Flash Memory Interface (CFI)

• JEDEC Standards

– Flash EEPROM Pinouts and command sets

• Packages Available

– 48-ball TFBGA (6mm x 8mm)

– 48-lead TSOP (12mm x 20mm)

– 56-ball LFBGA (8mm x 10mm)

• All non-Pb (lead-free) devices are RoHS compliant

SST36VF1601G产品属性

  • 类型

    描述

  • 型号

    SST36VF1601G

  • 功能描述

    闪存 16M 闪存 1M SRAM Industrial Temp

  • RoHS

  • 制造商

    ON Semiconductor

  • 数据总线宽度

    1 bit

  • 存储类型

    Flash

  • 存储容量

    2 MB

  • 结构

    256 K x 8

  • 接口类型

    SPI

  • 电源电压-最大

    3.6 V

  • 电源电压-最小

    2.3 V

  • 最大工作电流

    15 mA

  • 工作温度

    - 40 C to + 85 C

  • 安装风格

    SMD/SMT

  • 封装

    Reel

更新时间:2026-2-5 17:00:00
供应商 型号 品牌 批号 封装 库存 备注 价格
SST
23+
NA
263
专做原装正品,假一罚百!
SST
24+
65200
SST
2447
TSOP48
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
SST
23+
BGA
50000
全新原装正品现货,支持订货
SST
25+
BGA
3000
全新原装、诚信经营、公司现货销售!
SST
25+
SOP
17000
原厂原装,价格优势
SST
23+
BGA
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
SST
22+
BGA
3000
原装正品,支持实单
SST
2023+
BGA
8635
一级代理优势现货,全新正品直营店
SST
23+24
BGA
9632
原装正品,原盘原标,提供BOM一站式配单