位置：首页 > IC中文资料第5934页 > SST36VF1601C
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SST36VF1601C | 16 Mbit (x8/x16) Dual-Bank Flash Memory PRODUCT DESCRIPTION The SST36VF1601C and SST36VF1602C are 1M x16 or 2M x8 CMOS Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS Super Flash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability | SST Silicon Storage Technology, Inc |   | |
16 Megabit Concurrent SuperFlash PRODUCT DESCRIPTION The SST36VF1601/1602 are 1M x16 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with | SST Silicon Storage Technology, Inc | | ||
16 Mbit Concurrent SuperFlash PRODUCT DESCRIPTION The SST36VF1601/1602 are 1M x16 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with | SST Silicon Storage Technology, Inc | | ||
16 Mbit (x8/x16) Dual-Bank Flash Memory PRODUCT DESCRIPTION The SST36VF1601C and SST36VF1602C are 1M x16 or 2M x8 CMOS Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS Super Flash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability | SST Silicon Storage Technology, Inc | | ||
16 Mbit (x8/x16) Dual-Bank Flash Memory PRODUCT DESCRIPTION The SST36VF1601C and SST36VF1602C are 1M x16 or 2M x8 CMOS Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS Super Flash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability | SST Silicon Storage Technology, Inc | | ||
16 Mbit (x8/x16) Dual-Bank Flash Memory PRODUCT DESCRIPTION The SST36VF1601C and SST36VF1602C are 1M x16 or 2M x8 CMOS Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS Super Flash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability | SST Silicon Storage Technology, Inc | | ||
16 Mbit (x8/x16) Dual-Bank Flash Memory PRODUCT DESCRIPTION The SST36VF1601C and SST36VF1602C are 1M x16 or 2M x8 CMOS Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS Super Flash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability | SST Silicon Storage Technology, Inc | | ||
16 Mbit (x8/x16) Concurrent SuperFlash 文件：1.57074 Mbytes Page：36 Pages | GreenliantGreenliantsystems,LTD 绿芯半导体绿芯存储科技（厦门）有限公司 | | ||
512 Kbit (64K x8) Page-Write EEPROM 文件：871.45 Kbytes Page：23 Pages | GreenliantGreenliantsystems,LTD 绿芯半导体绿芯存储科技（厦门）有限公司 | |
SST36VF1601C产品属性
- 类型
描述
- 型号
SST36VF1601C
- 制造商
SST
- 制造商全称
Silicon Storage Technology, Inc
- 功能描述
16 Mbit(x8/x16) Dual-Bank Flash Memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SST |
24+ |
6868 |
原装现货,可开13%税票 |
||||
SST |
23+ |
TSOP |
8650 |
受权代理!全新原装现货特价热卖! |
|||
TSOP48 |
1000 |
原装长期供货! |
|||||
SST |
20+ |
TSOP |
2960 |
诚信交易大量库存现货 |
|||
SST |
23+24 |
TSOP |
9680 |
原盒原标.进口原装.支持实单 .价格优势 |
|||
SST |
2402+ |
TSOP-48 |
8324 |
原装正品!实单价优! |
|||
SST |
22+ |
TSOP |
3000 |
原装正品,支持实单 |
|||
SST原装特价出售 |
25+23+ |
TSOP48 |
18575 |
绝对原装正品全新进口深圳现货 |
|||
SST |
25+ |
BGA |
3000 |
全新原装、诚信经营、公司现货销售! |
|||
SST |
07+ |
TSOP-48 |
759 |
原装现货海量库存欢迎咨询 |
SST36VF1601C规格书下载地址
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2019-8-29
DdatasheetPDF页码索引
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