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SST36VF1601E-70-4C-EKE中文资料

厂家型号

SST36VF1601E-70-4C-EKE

文件大小

419.47Kbytes

页面数量

35

功能描述

16 Mbit (x8/x16) Concurrent SuperFlash

闪存 16M 闪存 1M SRAM

数据手册

下载地址一下载地址二

简称

SST

生产厂商

Silicon Storage Technology, Inc

中文名称

官网

SST36VF1601E-70-4C-EKE数据手册规格书PDF详情

PRODUCT DESCRIPTION

The SST36VF1601E and SST36VF1602E are 1M x16 or 2M x8 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash memory technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The devices write (Program or Erase) with a 2.7-3.6V power supply and conform to JEDEC standard pinouts for x8/x16 memories.

FEATURES:

• Organized as 1M x16 or 2M x8

• Dual Bank Architecture for Concurrent Read/Write Operation

– 16 Mbit Bottom Sector Protection

- SST36VF1601E: 12 Mbit + 4 Mbit

– 16 Mbit Top Sector Protection

- SST36VF1602E: 4 Mbit + 12 Mbit

• Single 2.7-3.6V for Read and Write Operations

• Superior Reliability

– Endurance: 100,000 cycles (typical)

– Greater than 100 years Data Retention

• Low Power Consumption:

– Active Current: 6 mA typical

– Standby Current: 4 µA typical

– Auto Low Power Mode: 4 µA typical

• Hardware Sector Protection/WP# Input Pin

– Protects the 4 outermost sectors (8 KWord) in the larger bank by driving WP# low and unprotects by driving WP# high

• Hardware Reset Pin (RST#)

– Resets the internal state machine to reading array data

• Byte# Pin

– Selects 8-bit or 16-bit mode

• Sector-Erase Capability

– Uniform 2 KWord sectors

• Chip-Erase Capability

• Block-Erase Capability

– Uniform 32 KWord blocks

• Erase-Suspend / Erase-Resume Capabilities

• Security ID Feature

– SST: 128 bits

– User: 128 bits

• Fast Read Access Time

– 70 ns

• Latched Address and Data

• Fast Erase and Program (typical):

– Sector-Erase Time: 18 ms

– Block-Erase Time: 18 ms

– Chip-Erase Time: 35 ms

– Program Time: 7 µs

• Automatic Write Timing

– Internal VPP Generation

• End-of-Write Detection

– Toggle Bit

– Data# Polling

– Ready/Busy# pin

• CMOS I/O Compatibility

• Conforms to Common Flash Memory Interface (CFI)

• JEDEC Standards

– Flash EEPROM Pinouts and command sets

• Packages Available

– 48-ball TFBGA (6mm x 8mm)

– 48-lead TSOP (12mm x 20mm)

• All non-Pb (lead-free) devices are RoHS compliant

SST36VF1601E-70-4C-EKE产品属性

  • 类型

    描述

  • 型号

    SST36VF1601E-70-4C-EKE

  • 功能描述

    闪存 16M 闪存 1M SRAM

  • RoHS

  • 制造商

    ON Semiconductor

  • 数据总线宽度

    1 bit

  • 存储类型

    Flash

  • 存储容量

    2 MB

  • 结构

    256 K x 8

  • 接口类型

    SPI

  • 电源电压-最大

    3.6 V

  • 电源电压-最小

    2.3 V

  • 最大工作电流

    15 mA

  • 工作温度

    - 40 C to + 85 C

  • 安装风格

    SMD/SMT

  • 封装

    Reel

更新时间:2025-10-20 14:16:00
供应商 型号 品牌 批号 封装 库存 备注 价格
SST
23+
TSOP48
6000
原装正品假一罚百!可开增票!
SST
23+
TSOP
50000
全新原装正品现货,支持订货
SST
23+
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
SST
22+
TSOP48
3000
原装正品,支持实单
SST
08+
TSOP
1528
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SST
24+
NA/
3824
优势代理渠道,原装正品,可全系列订货开增值税票
SST
原厂封装
9800
原装进口公司现货假一赔百
SST
23+
BGA
50000
全新原装正品现货,支持订货
SST
2023+
BGA
8635
一级代理优势现货,全新正品直营店
SST
24+
BGA
37279
郑重承诺只做原装进口现货