N-Ch Enhancement Mode Power MOSFET

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MosFET

N-Ch Enhancement Mode Power MOSFET

DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, pri

N-Ch Enhancement Mode Power MOSFET

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N-Channel 6 0-V (D-S) MOSFET

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N-Channel MOSFET uses advanced trench technology

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MosFET

MOSFET

60V N-Channel Enhancement Mode Power MOSFET

Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired

60V N-Channel Enhancement Mode Power MOSFET

General Description The 20N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology

N-Channel 60-V (D-S) MOSFET

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Fast Switching

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20A mps,60 Volts N-CHANNEL MOSFET

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