位置：首页 > IC中文资料 > SSD20N06-C
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SSD20N06-C | MOSFET | SECOS 喜可士 |   | |
60V N-Channel Enhancement Mode Power MOSFET Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired | UMW 友台半导体 | | ||
60V N-Channel Enhancement Mode Power MOSFET General Description The 20N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology | EVVOSEMI 翊欧 | | ||
N-Channel 60-V (D-S) MOSFET 文件：897.38 Kbytes Page：6 Pages | VBSEMI 微碧半导体 | | ||
Fast Switching 文件：67.37 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
20A mps,60 Volts N-CHANNEL MOSFET 文件：193.72 Kbytes Page：2 Pages | CHONGQING 平伟实业 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SECOS |
24+ |
NA/ |
22995 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
MAGNACHIP/美格 |
24+ |
TO-252 |
39500 |
进口原装现货 支持实单价优 |
|||
SECOS |
20+ |
TO-252 |
32500 |
现货很近!原厂很远!只做原装 |
|||
S |
TO-252 |
22+ |
6000 |
十年配单,只做原装 |
|||
SECOS/喜可士 |
24+ |
TO-252 |
60000 |
全新原装现货 |
|||
SECOS |
23+ |
TO252 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
SECOS |
16+ |
TO252 |
50 |
原装 |
|||
SECOS |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
|||
Secos |
21+ |
TO-252 |
10000 |
原装现货假一罚十 |
SSD20N06-C规格书下载地址
SSD20N06-C参数引脚图相关
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DdatasheetPDF页码索引
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