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SR160S

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 100 Volts Forward Current - 1.0 Ampere FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Metal silicon junction,majority carrier conduction ♦ Low power loss,high efficiency ♦ High forward surge current capability ♦

SY

顺烨电子

SR160S

1.0 AMP SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE 20 to 100 Volts CURRENT 1.0 Ampere FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability * Epitaxial construction

UNIOHM

厚声

SR160S

Schottky Barrier Rectifiers

VOLTAGE RANGE: 20 --- 100 V CURRENT: 1.0A Features ◇ Metal-Semiconductor junction with guard ring ◇ Epitaxial construction ◇ Low forward voltage drop,low switching losses ◇ High surge capability ◇ For use in low voltage,high frequency inverters free wheeling,and polarity protection appli

LUGUANG

鲁光电子

SR160S

1.0 AMP SCHOTTKY BARRIER RECTIFIERS

[Goodwork] VOLTAGE RANGE 20 to 100 Volts CURRENT 1.0 Ampere FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability * Epitaxial construction

ETCList of Unclassifed Manufacturers

未分类制造商

SR160S

肖特基二极管

肖特基二极管,也被称为热载流子二极管,是一种具有低正向压降和非常快速的开关动作的半导体二极管。当电流流过肖特基二极管时,肖特基二级管端子上有一个小的电压降。 普通二极管的电压压降在0.6V-1.7V之间,而肖特基二极管的电压降通常在0.15V-0.45V之间。

Sinedevice

SR160S

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 100 Volts Forward Current - 1.0 Ampere FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Metal silicon junction,majority carrier conduction ♦ Low power loss,high efficiency ♦ High forward surge current capability ♦

SHUNYE

顺烨电子

SR160S

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 100 Volts Forward Current -1.0 Ampere FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Metal silicon junction,majority carrier conduction ♦ Low power loss,high efficiency ♦ High forward surge current capability ♦ H

CHENDA

辰达半导体

SR160S

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE: 20 --- 100 V CURRENT: 1.0A FEATURES ◇ Metal-Semiconductor junction with guard ring ◇ Epitaxial construction ◇ Low forward voltage drop,low switching losses ◇ High surge capability ◇ For use in low voltage,high frequency inverters free wheeling,and polarity protection appli

DSK

SR160S

丝印代码:MDDSR160S;SCHOTTKY BARRIER RECTIFIER

文件:597.68 Kbytes Page:2 Pages

CHENDA

辰达半导体

SR160S

肖特基二极管

SINEDEVICE

SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current - 1.0Ampere

Reverse Voltage - 20 to 100 Volts Forward Current - 1.0 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Metal silicon junction ,majority carrier conduction • Guard ring for overvoltage protection • Low power loss ,high efficiency • High curr

CHENDA

辰达半导体

SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current - 1.0Ampere

Reverse Voltage - 20 to 100 Volts Forward Current - 1.0 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Metal silicon junction ,majority carrier conduction • Guard ring for overvoltage protection • Low power loss ,high efficiency • High curr

GXELECTRONICS

星合电子

SCHOTTKY BARRIER RECTIFIER

文件:75.51 Kbytes Page:2 Pages

JINANJINGHENG

晶恒集团

Axial Lead Rectifiers

Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency invert

MOTOROLA

摩托罗拉

MOSFET BROADBAND RF POWER FET

The RF MOSFET Line Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Typical Performance at 400 MHz, 28 Vdc Output Power = 4.0 Watts Gain = 17 dB Efficiency = 50 • Excellent Thermal

MOTOROLA

摩托罗拉

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

NEC

瑞萨

MOSORB ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS

The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA5.0A series is supplied in Motorola’s exclusive, cost-effective, highly

MOTOROLA

摩托罗拉

POWER TRANSISTORS(10A,320-380V,125W)

MOSPEC

统懋

SR160S产品属性

  • 类型

    描述

  • 型号

    SR160S

  • 功能描述

    1.0 AMP SCHOTTKY BARRIER RECTIFIERS

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