Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) • Pb

N-Channel MOSFET Transistor

• DESCRIPTION • High peak current capability • Ultra low gate charge • Ultra low effective capacitances • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.29Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device

Cool MOS??Power Transistor

文件：983.06 Kbytes Page：13 Pages

New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge

文件：1.41387 Mbytes Page：13 Pages

CoolMOS Power Transistor Features New revolutionary high voltage technology

文件：401.12 Kbytes Page：10 Pages

New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge

文件：1.41387 Mbytes Page：13 Pages

CoolMOS Power Transistor Features New revolutionary high voltage technology

文件：401.12 Kbytes Page：10 Pages

isc N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤290mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated

N-Channel 900-V (D-S) MOSFET

Key Features: •Low rDS(on) trench technology •Low thermal impedance •Fast switching speed

CoolMOSTM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated

文件：683.83 Kbytes Page：11 Pages

CoolMOSTM Power Transistor

文件：736.98 Kbytes Page：11 Pages