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SPB17N80C3价格
参考价格：￥14.7713
型号：SPB17N80C3 品牌：Infineon 备注：这里有SPB17N80C3多少钱，2025年最近7天走势，今日出价，今日竞价，SPB17N80C3批发/采购报价，SPB17N80C3行情走势销售排行榜，SPB17N80C3报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SPB17N80C3 | Cool MOS??Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) • Pb | Infineon 英飞凌 |   | |
SPB17N80C3 | Isc N-Channel MOSFET Transistor • FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications | ISC 无锡固电 | | |
SPB17N80C3 | CoolMOS짰 Power Transistor 文件：432.09 Kbytes Page：10 Pages | Infineon 英飞凌 | | |
SPB17N80C3 | 500V-900V CoolMOS™ N-Channel Power MOSFET | Infineon 英飞凌 | | |
SPB17N80C3 | CoolMOS짰 Power Transistor Features new revolutionary high voltage technology 文件：326.37 Kbytes Page：10 Pages | Infineon 英飞凌 | | |
CoolMOS짰 Power Transistor Features new revolutionary high voltage technology 文件：326.37 Kbytes Page：10 Pages | Infineon 英飞凌 | | ||
CoolMOS짰 Power Transistor 文件：432.09 Kbytes Page：10 Pages | Infineon 英飞凌 | | ||
Cool MOS??Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated | Infineon 英飞凌 | | ||
isc N-Channel MOSFET Transistor • DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤290mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
N-Channel 900-V (D-S) MOSFET Key Features: •Low rDS(on) trench technology •Low thermal impedance •Fast switching speed | AnalogPower | | ||
CoolMOSTM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated 文件：683.83 Kbytes Page：11 Pages | Infineon 英飞凌 | | ||
CoolMOSTM Power Transistor 文件：736.98 Kbytes Page：11 Pages | Infineon 英飞凌 | |
SPB17N80C3产品属性
- 类型
描述
- 型号
SPB17N80C3
- 功能描述
MOSFET COOL MOS PWR TRANS 800V
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
25+ |
TO263 |
18600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
Infineon(英飞凌) |
24+ |
TO-263 |
11948 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
INFINEON |
24+ |
Tube |
75000 |
郑重承诺只做原装进口现货 |
|||
INFINEON |
11+ |
TO-263 |
6000 |
绝对原装自己现货 |
|||
INFINEON/英飞凌 |
2405+ |
TO-263 |
4475 |
只做原装正品渠道订货 |
|||
INFINEON |
24+ |
D2PAK |
10000 |
英飞凌代理渠道,只做原装QQ:2369405325 |
|||
INFINEON/英飞凌 |
24+ |
TO263 |
9600 |
原装现货,优势供应,支持实单! |
|||
INFINEON |
23+ |
TO-263 |
5000 |
专做原装正品,假一罚百! |
|||
INFINOEN |
24+ |
TO-263-7 |
90000 |
一级代理进口原装现货、假一罚十价格合理 |
|||
INFINEON |
08+ |
TO263-3-2 |
20000 |
普通 |
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SPB17N80C3规格书下载地址
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SPB17N80C3数据表相关新闻
SPC5602BK0CLH4
原装正品现货
2022-5-24SPC5200CBV400B
https://hfx03.114ic.com/
2022-3-28SPB100N032L-03，SPB100N04S2L-03，SPB11N60C2，SPB11N60S5E3045A，SPB160N04S2-03，SPB20N60C3E3045A，SPB80N03S2L-03，SPB80N03S2L05，SPB80N03S2L-05，SPB80N06S2L-05，SPB80P06P，SPP02N60S5，SPP04N60C2
SPB100N032L-03，SPB100N04S2L-03，SPB11N60C2，SPB11N60S5E3045A，SPB160N04S2-03，SPB20N60C3E3045A，SPB80N03S2L-03，SPB80N03S2L05，SPB80N03S2L-05，SPB80N06S2L-05，SPB80P06P，SPP02N60S5，SPP04N60C2
2019-12-16SPB17N80C3BSZ520N15NS3G特价热销
SPB17N80C3 BSZ520N15NS3 G 电信 ，供电系统
2019-8-6SPA07N60C3
SPA07N60C3
2019-4-24SPA20N60CFD-CoolMOS功率晶体管
特点 •新的革命高电压技术 •内在的快速恢复体二极管 •极低的反向恢复电荷 •超低栅极电荷 •至尊的dv/ dt的额定 •高峰值电流能力 •定期雪崩额定 •合格的为工业级应用根据JEDEC0） •无铅引脚电镀，符合RoHS标准
2012-11-10
DdatasheetPDF页码索引
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