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SPW17N80C3价格
参考价格：￥17.3908
型号：SPW17N80C3 品牌：INFINEON 备注：这里有SPW17N80C3多少钱，2026年最近7天走势，今日出价，今日竞价，SPW17N80C3批发/采购报价，SPW17N80C3行情走势销售排行榜，SPW17N80C3报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SPW17N80C3 | Cool MOS??Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated | Infineon 英飞凌 |   | |
SPW17N80C3 | isc N-Channel MOSFET Transistor • DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤290mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | |
SPW17N80C3 | CoolMOS Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitances CoolMOSTM 800V designed for: | Infineon 英飞凌 | | |
SPW17N80C3 | 500V-900V CoolMOS™ N-Channel Power MOSFET | Infineon 英飞凌 | | |
SPW17N80C3 | CoolMOSTM Power Transistor 文件：736.98 Kbytes Page：11 Pages | Infineon 英飞凌 | | |
SPW17N80C3 | CoolMOSTM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated 文件：683.83 Kbytes Page：11 Pages | Infineon 英飞凌 | | |
CoolMOS Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitances CoolMOSTM 800V designed for: | Infineon 英飞凌 | | ||
CoolMOSTM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated 文件：683.83 Kbytes Page：11 Pages | Infineon 英飞凌 | | ||
CoolMOSTM Power Transistor 文件：736.98 Kbytes Page：11 Pages | Infineon 英飞凌 | | ||
isc N-Channel MOSFET Transistor • DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤290mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
Cool MOS??Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated | Infineon 英飞凌 | | ||
N-Channel 900-V (D-S) MOSFET Key Features: •Low rDS(on) trench technology •Low thermal impedance •Fast switching speed | AnalogPower | | ||
CoolMOSTM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated 文件：683.83 Kbytes Page：11 Pages | Infineon 英飞凌 | | ||
CoolMOSTM Power Transistor 文件：736.98 Kbytes Page：11 Pages | Infineon 英飞凌 | |
SPW17N80C3产品属性
- 类型
描述
- 型号
SPW17N80C3
- 功能描述
MOSFET COOL MOS PWR TRANS 800V 17A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
22+ |
sot |
6600 |
正品渠道现货,终端可提供BOM表配单。 |
|||
Infineon(英飞凌) |
24+ |
TO-247AC |
6793 |
只做原装现货假一罚十!价格最低!只卖原装现货 |
|||
INFINEON |
24+ |
TO-247/TO-3P |
352000 |
SPW17N80C3原装正品,特价供应! INFINEON场效应管MOSTO-247 场效应管MOSFETNCOOLMOSTO-247晶体管极性:本公司经销电子元件、ic集成电路、mcu微控制器、pwm控制器、igbt模块、数字信号处理器、运算放大器等,批发,零售,昌和盛利电子诚信经营,专营进口原装现货 |
|||
INFINEON |
24+ |
TO-247 |
6530 |
绝对原装现货,价格低,欢迎询购! |
|||
英飞翎 |
17+ |
TO-247 |
31518 |
原装正品 可含税交易 |
|||
INFINEON/英飞凌 |
2021+ |
TO-247 |
9000 |
原装现货,随时欢迎询价 |
|||
INFINEON |
25+ |
TO247 |
18600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
Infineon(英飞凌) |
24+ |
TO-247 |
7814 |
支持大陆交货,美金交易。原装现货库存。 |
|||
IR |
16+ |
TO-247 |
6092 |
全新原装/深圳现货库2 |
|||
INFINEON/英飞凌 |
24+ |
TO-247 |
10000 |
只做原装欢迎含税交易,假一赔十,放心购买 |
SPW17N80C3规格书下载地址
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SPW17N80C3数据表相关新闻
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DdatasheetPDF页码索引
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