isc N-Channel MOSFET Transistor

• FEATURES • Static drain-source on-resistance: RDS(on) ≤0.29Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Ideal for high-frequency switching and synchronous re

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) • Pb

Cool MOS??Power Transistor

文件：983.06 Kbytes Page：13 Pages

500V-900V CoolMOS™ N-Channel Power MOSFET

Cool MOS??Power Transistor

文件：983.06 Kbytes Page：13 Pages

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated

isc N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤290mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

N-Channel 900-V (D-S) MOSFET

Key Features: •Low rDS(on) trench technology •Low thermal impedance •Fast switching speed

CoolMOSTM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated

文件：683.83 Kbytes Page：11 Pages

CoolMOSTM Power Transistor

文件：736.98 Kbytes Page：11 Pages